Vacancy complexes in Sb-doped SnO2

Esa Korhonen; F. Tuomisto; O. Bierwagen; J.S. Speck; M.E. White; Z. Galazka

doi:10.1063/1.4865672

Vacancy complexes in Sb-doped SnO₂

Esa Korhonen, F. Tuomisto, O. Bierwagen, J.S. Speck, M.E. White, Z. Galazka

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

MBE-grown Sb-doped epitaxial SnO2 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.

Original language	English
Title of host publication	INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013
Editors	A Cavallini, SK Estreicher
Publisher	American Institute of Physics
Pages	368-371
Number of pages	4
ISBN (Print)	978-0-7354-1215-6
DOIs	https://doi.org/10.1063/1.4865672
Publication status	Published - 2014
MoE publication type	A4 Conference publication
Event	International Conference on Defects in Semiconductors - Bologna, Italy Duration: 22 Jul 2013 → 26 Jul 2013 Conference number: 27

Publication series

Name	AIP Conference Proceedings
Publisher	American Institute of Physics
Volume	1583
ISSN (Print)	0094-243X

Conference

Conference	International Conference on Defects in Semiconductors
Abbreviated title	ICDS
Country/Territory	Italy
City	Bologna
Period	22/07/2013 → 26/07/2013

Keywords

positron
SnO2
vacancy

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10.1063/1.4865672

Cite this

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title = "Vacancy complexes in Sb-doped SnO2",

abstract = "MBE-grown Sb-doped epitaxial SnO2 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.",

keywords = "positron, SnO2, vacancy, positron, SnO2, vacancy, positron, SnO2, vacancy",

author = "Esa Korhonen and F. Tuomisto and O. Bierwagen and J.S. Speck and M.E. White and Z. Galazka",

year = "2014",

doi = "10.1063/1.4865672",

language = "English",

isbn = "978-0-7354-1215-6",

series = "AIP Conference Proceedings ",

publisher = "American Institute of Physics",

pages = "368--371",

editor = "A Cavallini and SK Estreicher",

booktitle = "INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013",

address = "United States",

note = "International Conference on Defects in Semiconductors, ICDS ; Conference date: 22-07-2013 Through 26-07-2013",

}

Korhonen, E, Tuomisto, F, Bierwagen, O, Speck, JS, White, ME & Galazka, Z 2014, Vacancy complexes in Sb-doped SnO₂. in A Cavallini & SK Estreicher (eds), INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013. AIP Conference Proceedings , vol. 1583, American Institute of Physics, pp. 368-371, International Conference on Defects in Semiconductors, Bologna, Italy, 22/07/2013. https://doi.org/10.1063/1.4865672

Vacancy complexes in Sb-doped SnO₂. / Korhonen, Esa; Tuomisto, F.; Bierwagen, O. et al.
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013. ed. / A Cavallini; SK Estreicher. American Institute of Physics, 2014. p. 368-371 (AIP Conference Proceedings ; Vol. 1583).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Vacancy complexes in Sb-doped SnO2

AU - Korhonen, Esa

AU - Tuomisto, F.

AU - Bierwagen, O.

AU - Speck, J.S.

AU - White, M.E.

AU - Galazka, Z.

N1 - Conference code: 27

PY - 2014

Y1 - 2014

N2 - MBE-grown Sb-doped epitaxial SnO2 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.

AB - MBE-grown Sb-doped epitaxial SnO2 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.

KW - positron

KW - SnO2

KW - vacancy

KW - positron

KW - SnO2

KW - vacancy

KW - positron

KW - SnO2

KW - vacancy

U2 - 10.1063/1.4865672

DO - 10.1063/1.4865672

M3 - Conference article in proceedings

SN - 978-0-7354-1215-6

T3 - AIP Conference Proceedings

SP - 368

EP - 371

BT - INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013

A2 - Cavallini, A

A2 - Estreicher, SK

PB - American Institute of Physics

T2 - International Conference on Defects in Semiconductors

Y2 - 22 July 2013 through 26 July 2013

ER -

Vacancy complexes in Sb-doped SnO2

Abstract

Publication series

Conference

Keywords

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Vacancy complexes in Sb-doped SnO₂