Abstract
MBE-grown Sb-doped epitaxial SnO2 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.
Original language | English |
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Title of host publication | INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 |
Editors | A Cavallini, SK Estreicher |
Publisher | American Institute of Physics |
Pages | 368-371 |
Number of pages | 4 |
ISBN (Print) | 978-0-7354-1215-6 |
DOIs | |
Publication status | Published - 2014 |
MoE publication type | A4 Conference publication |
Event | International Conference on Defects in Semiconductors - Bologna, Italy Duration: 22 Jul 2013 → 26 Jul 2013 Conference number: 27 |
Publication series
Name | AIP Conference Proceedings |
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Publisher | American Institute of Physics |
Volume | 1583 |
ISSN (Print) | 0094-243X |
Conference
Conference | International Conference on Defects in Semiconductors |
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Abbreviated title | ICDS |
Country/Territory | Italy |
City | Bologna |
Period | 22/07/2013 → 26/07/2013 |
Keywords
- positron
- SnO2
- vacancy