Vacancy clustering and acceptor activation in nitrogen-implanted ZnO

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Vacancy clustering and acceptor activation in nitrogen-implanted ZnO. / Moe Børseth, T.; Tuomisto, Filip; Christensen, J.S.; Monakhov, E.V.; Svensson, B.G.; Kuznetsov, A.Yu.

In: Physical Review B, Vol. 77, No. 4, 045204, 01.2008, p. 1-6.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Moe Børseth, T, Tuomisto, F, Christensen, JS, Monakhov, EV, Svensson, BG & Kuznetsov, AY 2008, 'Vacancy clustering and acceptor activation in nitrogen-implanted ZnO' Physical Review B, vol. 77, no. 4, 045204, pp. 1-6. https://doi.org/10.1103/PhysRevB.77.045204

APA

Moe Børseth, T., Tuomisto, F., Christensen, J. S., Monakhov, E. V., Svensson, B. G., & Kuznetsov, A. Y. (2008). Vacancy clustering and acceptor activation in nitrogen-implanted ZnO. Physical Review B, 77(4), 1-6. [045204]. https://doi.org/10.1103/PhysRevB.77.045204

Vancouver

Moe Børseth T, Tuomisto F, Christensen JS, Monakhov EV, Svensson BG, Kuznetsov AY. Vacancy clustering and acceptor activation in nitrogen-implanted ZnO. Physical Review B. 2008 Jan;77(4):1-6. 045204. https://doi.org/10.1103/PhysRevB.77.045204

Author

Moe Børseth, T. ; Tuomisto, Filip ; Christensen, J.S. ; Monakhov, E.V. ; Svensson, B.G. ; Kuznetsov, A.Yu. / Vacancy clustering and acceptor activation in nitrogen-implanted ZnO. In: Physical Review B. 2008 ; Vol. 77, No. 4. pp. 1-6.

Bibtex - Download

@article{2515574c650445a49772d8bbb66e954e,
title = "Vacancy clustering and acceptor activation in nitrogen-implanted ZnO",
abstract = "The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220keV N implantation using doses in the low 1015cm−2 range induces small and big vacancy clusters containing at least 2 and 3–4 Zn vacancies, respectively. The small clusters are present already in as-implanted samples and remain stable up to 1000°C with no significant effect on the resistivity evolution. In contrast, formation of the big clusters at 600°C is associated with a significant increase in the free electron concentration attributed to gettering of amphoteric Li impurities by these clusters. Further annealing at 800°C results in a dramatic decrease in the free electron concentration correlated with activation of 1016–1017cm−3 acceptors likely to be N and/or Li related. The samples remain n type, however, and further annealing at 1000°C results in passivation of the acceptor states while the big clusters dissociate.",
keywords = "positron annihilation, SIMS, ZnO, positron annihilation, SIMS, ZnO, positron annihilation, SIMS, ZnO",
author = "{Moe B{\o}rseth}, T. and Filip Tuomisto and J.S. Christensen and E.V. Monakhov and B.G. Svensson and A.Yu. Kuznetsov",
year = "2008",
month = "1",
doi = "10.1103/PhysRevB.77.045204",
language = "English",
volume = "77",
pages = "1--6",
journal = "Physical Review B (Condensed Matter and Materials Physics)",
issn = "2469-9950",
publisher = "American Physical Society",
number = "4",

}

RIS - Download

TY - JOUR

T1 - Vacancy clustering and acceptor activation in nitrogen-implanted ZnO

AU - Moe Børseth, T.

AU - Tuomisto, Filip

AU - Christensen, J.S.

AU - Monakhov, E.V.

AU - Svensson, B.G.

AU - Kuznetsov, A.Yu.

PY - 2008/1

Y1 - 2008/1

N2 - The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220keV N implantation using doses in the low 1015cm−2 range induces small and big vacancy clusters containing at least 2 and 3–4 Zn vacancies, respectively. The small clusters are present already in as-implanted samples and remain stable up to 1000°C with no significant effect on the resistivity evolution. In contrast, formation of the big clusters at 600°C is associated with a significant increase in the free electron concentration attributed to gettering of amphoteric Li impurities by these clusters. Further annealing at 800°C results in a dramatic decrease in the free electron concentration correlated with activation of 1016–1017cm−3 acceptors likely to be N and/or Li related. The samples remain n type, however, and further annealing at 1000°C results in passivation of the acceptor states while the big clusters dissociate.

AB - The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220keV N implantation using doses in the low 1015cm−2 range induces small and big vacancy clusters containing at least 2 and 3–4 Zn vacancies, respectively. The small clusters are present already in as-implanted samples and remain stable up to 1000°C with no significant effect on the resistivity evolution. In contrast, formation of the big clusters at 600°C is associated with a significant increase in the free electron concentration attributed to gettering of amphoteric Li impurities by these clusters. Further annealing at 800°C results in a dramatic decrease in the free electron concentration correlated with activation of 1016–1017cm−3 acceptors likely to be N and/or Li related. The samples remain n type, however, and further annealing at 1000°C results in passivation of the acceptor states while the big clusters dissociate.

KW - positron annihilation

KW - SIMS

KW - ZnO

KW - positron annihilation

KW - SIMS

KW - ZnO

KW - positron annihilation

KW - SIMS

KW - ZnO

U2 - 10.1103/PhysRevB.77.045204

DO - 10.1103/PhysRevB.77.045204

M3 - Article

VL - 77

SP - 1

EP - 6

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 2469-9950

IS - 4

M1 - 045204

ER -

ID: 3432302