Vacancies and E-centers in silicon as multisymmetry defects

Maria G. Ganchenkova, Laura E. Oikkonen, Vladimir A. Borodin, S. Nicolaysen, Risto M. Nieminen

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)
Original languageEnglish
Pages (from-to)107-111
JournalMaterials Science and Engineering B
Volume159-160
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Keywords

  • silicon, E-center, symmetry, ab initio

Cite this

Ganchenkova, M. G., Oikkonen, L. E., Borodin, V. A., Nicolaysen, S., & Nieminen, R. M. (2009). Vacancies and E-centers in silicon as multisymmetry defects. Materials Science and Engineering B, 159-160, 107-111.