Using positron 2D-ACAR as a probe of point defects in GaAs: The As-vacancy as a case study

R. Ambigapahty, C. Corbel, P. Hautojärvi, A.A. Manuel, K. Saarinen

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Original language	English
Pages (from-to)	529
Journal	Applied Physics A: materials science & processing
Volume	62
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

Keywords

@article{8f66b2c9946b4ea78af44afac46d497f,

title = "Using positron 2D-ACAR as a probe of point defects in GaAs: The As-vacancy as a case study",

keywords = "positron annihilation, semiconductor, positron annihilation, semiconductor, positron annihilation, semiconductor",

author = "R. Ambigapahty and C. Corbel and P. Hautoj{\"a}rvi and A.A. Manuel and K. Saarinen",

year = "1996",

language = "English",

volume = "62",

pages = "529",

journal = "APPLIED PHYSICS A-MATERIALS SCIENCE AND PROCESSING",

issn = "0947-8396",

}

TY - JOUR

T1 - Using positron 2D-ACAR as a probe of point defects in GaAs: The As-vacancy as a case study

AU - Ambigapahty, R.

AU - Corbel, C.

AU - Hautojärvi, P.

AU - Manuel, A.A.

AU - Saarinen, K.

PY - 1996

Y1 - 1996

KW - positron annihilation

KW - semiconductor

KW - positron annihilation

KW - semiconductor

KW - positron annihilation

KW - semiconductor

M3 - Article

VL - 62

SP - 529

JO - APPLIED PHYSICS A-MATERIALS SCIENCE AND PROCESSING

JF - APPLIED PHYSICS A-MATERIALS SCIENCE AND PROCESSING

SN - 0947-8396

ER -