Using positron 2D-ACAR as a probe of point defects in GaAs: The As-vacancy as a case study

R. Ambigapahty, C. Corbel, P. Hautojärvi, A.A. Manuel, K. Saarinen

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)529
JournalApplied Physics A: materials science & processing
Volume62
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

Keywords

  • positron annihilation
  • semiconductor

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