Unveiling the plasma wave in the channel of graphene field-effect transistor

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

  • A. Soltani
  • F. Kuschewski
  • M. Bonmann
  • Andrey Generalov

  • A. Vorobiev
  • F. Ludwig
  • M. Wiecha
  • D. Cibiraite
  • F. Walla
  • S. C. Kehr
  • L. M. Eng
  • J. Stake
  • H. G. Roskos

Research units

  • Goethe University Frankfurt
  • Technische Universität Dresden
  • Chalmers University of Technology

Abstract

Coupling an electromagnetic wave at GHz to THz frequencies into the channel of a graphene field-effect transistor (GFET) provokes collective charge carrier oscillations of the two-dimensional electron gas (2DEG) known as plasma waves. Here, we report the very first experimental and direct mapping of the electric field distribution in a gated GFET at nanometer length scales using scattering-type scanning near-field microscopy (s-SNOM) at 2 THz. Based on the experimental results we deduce the plasma wave velocity for different gate bias voltages, which is in good agreement with the theoretical prediction.

Details

Original languageEnglish
Title of host publicationIRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
Publication statusPublished - 1 Sep 2019
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Infrared, Millimeter, and Terahertz Waves - Paris, France
Duration: 1 Sep 20196 Sep 2019
Conference number: 44

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

ConferenceInternational Conference on Infrared, Millimeter, and Terahertz Waves
Abbreviated titleIRMMW-THz
CountryFrance
CityParis
Period01/09/201906/09/2019

ID: 38759063