Universal Imaging of Full Strain Tensor in 2D Crystals with Third-Harmonic Generation

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Universal Imaging of Full Strain Tensor in 2D Crystals with Third-Harmonic Generation. / Liang, Jing; Wang, Jinhuan; Zhang, Zhihong; Su, Yingze; Guo, Yi; Qiao, Ruixi; Song, Peizhao; Gao, Peng; Zhao, Yun; Jiao, Qingze; Wu, Shiwei; Sun, Zhipei; Yu, Dapeng; Liu, Kaihui.

In: Advanced Materials, Vol. 31, No. 19, 1808160, 10.05.2019.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Liang, J, Wang, J, Zhang, Z, Su, Y, Guo, Y, Qiao, R, Song, P, Gao, P, Zhao, Y, Jiao, Q, Wu, S, Sun, Z, Yu, D & Liu, K 2019, 'Universal Imaging of Full Strain Tensor in 2D Crystals with Third-Harmonic Generation', Advanced Materials, vol. 31, no. 19, 1808160. https://doi.org/10.1002/adma.201808160

APA

Liang, J., Wang, J., Zhang, Z., Su, Y., Guo, Y., Qiao, R., ... Liu, K. (2019). Universal Imaging of Full Strain Tensor in 2D Crystals with Third-Harmonic Generation. Advanced Materials, 31(19), [1808160]. https://doi.org/10.1002/adma.201808160

Vancouver

Author

Liang, Jing ; Wang, Jinhuan ; Zhang, Zhihong ; Su, Yingze ; Guo, Yi ; Qiao, Ruixi ; Song, Peizhao ; Gao, Peng ; Zhao, Yun ; Jiao, Qingze ; Wu, Shiwei ; Sun, Zhipei ; Yu, Dapeng ; Liu, Kaihui. / Universal Imaging of Full Strain Tensor in 2D Crystals with Third-Harmonic Generation. In: Advanced Materials. 2019 ; Vol. 31, No. 19.

Bibtex - Download

@article{ecba7fcd06534eb08797ab48d0471573,
title = "Universal Imaging of Full Strain Tensor in 2D Crystals with Third-Harmonic Generation",
abstract = "Quantitatively mapping and monitoring the strain distribution in 2D materials is essential for their physical understanding and function engineering. Optical characterization methods are always appealing due to unique noninvasion and high-throughput advantages. However, all currently available optical spectroscopic techniques have application limitation, e.g., photoluminescence spectroscopy is for direct-bandgap semiconducting materials, Raman spectroscopy is for ones with Raman-active and strain-sensitive phonon modes, and second-harmonic generation spectroscopy is only for noncentrosymmetric ones. Here, a universal methodology to measure the full strain tensor in any 2D crystalline material by polarization-dependent third-harmonic generation is reported. This technique utilizes the third-order nonlinear optical response being a universal property in 2D crystals and the nonlinear susceptibility has a one-to-one correspondence to strain tensor via a photoelastic tensor. The photoelastic tensor of both a noncentrosymmetric D 3h WS 2 monolayer and a centrosymmetric D 3d WS 2 bilayer is successfully determined, and the strain tensor distribution in homogenously strained and randomly strained monolayer WS 2 is further mapped. In addition, an atlas of photoelastic tensors to monitor the strain distribution in 2D materials belonging to all 32 crystallographic point groups is provided. This universal characterization on strain tensor should facilitate new functionality designs and accelerate device applications in 2D-materials-based electronic, optoelectronic, and photovoltaic devices.",
keywords = "2D materials, photoelastic tensor, strain tensor characterization, third-harmonic generation",
author = "Jing Liang and Jinhuan Wang and Zhihong Zhang and Yingze Su and Yi Guo and Ruixi Qiao and Peizhao Song and Peng Gao and Yun Zhao and Qingze Jiao and Shiwei Wu and Zhipei Sun and Dapeng Yu and Kaihui Liu",
year = "2019",
month = "5",
day = "10",
doi = "10.1002/adma.201808160",
language = "English",
volume = "31",
journal = "Advanced Materials",
issn = "0935-9648",
number = "19",

}

RIS - Download

TY - JOUR

T1 - Universal Imaging of Full Strain Tensor in 2D Crystals with Third-Harmonic Generation

AU - Liang, Jing

AU - Wang, Jinhuan

AU - Zhang, Zhihong

AU - Su, Yingze

AU - Guo, Yi

AU - Qiao, Ruixi

AU - Song, Peizhao

AU - Gao, Peng

AU - Zhao, Yun

AU - Jiao, Qingze

AU - Wu, Shiwei

AU - Sun, Zhipei

AU - Yu, Dapeng

AU - Liu, Kaihui

PY - 2019/5/10

Y1 - 2019/5/10

N2 - Quantitatively mapping and monitoring the strain distribution in 2D materials is essential for their physical understanding and function engineering. Optical characterization methods are always appealing due to unique noninvasion and high-throughput advantages. However, all currently available optical spectroscopic techniques have application limitation, e.g., photoluminescence spectroscopy is for direct-bandgap semiconducting materials, Raman spectroscopy is for ones with Raman-active and strain-sensitive phonon modes, and second-harmonic generation spectroscopy is only for noncentrosymmetric ones. Here, a universal methodology to measure the full strain tensor in any 2D crystalline material by polarization-dependent third-harmonic generation is reported. This technique utilizes the third-order nonlinear optical response being a universal property in 2D crystals and the nonlinear susceptibility has a one-to-one correspondence to strain tensor via a photoelastic tensor. The photoelastic tensor of both a noncentrosymmetric D 3h WS 2 monolayer and a centrosymmetric D 3d WS 2 bilayer is successfully determined, and the strain tensor distribution in homogenously strained and randomly strained monolayer WS 2 is further mapped. In addition, an atlas of photoelastic tensors to monitor the strain distribution in 2D materials belonging to all 32 crystallographic point groups is provided. This universal characterization on strain tensor should facilitate new functionality designs and accelerate device applications in 2D-materials-based electronic, optoelectronic, and photovoltaic devices.

AB - Quantitatively mapping and monitoring the strain distribution in 2D materials is essential for their physical understanding and function engineering. Optical characterization methods are always appealing due to unique noninvasion and high-throughput advantages. However, all currently available optical spectroscopic techniques have application limitation, e.g., photoluminescence spectroscopy is for direct-bandgap semiconducting materials, Raman spectroscopy is for ones with Raman-active and strain-sensitive phonon modes, and second-harmonic generation spectroscopy is only for noncentrosymmetric ones. Here, a universal methodology to measure the full strain tensor in any 2D crystalline material by polarization-dependent third-harmonic generation is reported. This technique utilizes the third-order nonlinear optical response being a universal property in 2D crystals and the nonlinear susceptibility has a one-to-one correspondence to strain tensor via a photoelastic tensor. The photoelastic tensor of both a noncentrosymmetric D 3h WS 2 monolayer and a centrosymmetric D 3d WS 2 bilayer is successfully determined, and the strain tensor distribution in homogenously strained and randomly strained monolayer WS 2 is further mapped. In addition, an atlas of photoelastic tensors to monitor the strain distribution in 2D materials belonging to all 32 crystallographic point groups is provided. This universal characterization on strain tensor should facilitate new functionality designs and accelerate device applications in 2D-materials-based electronic, optoelectronic, and photovoltaic devices.

KW - 2D materials

KW - photoelastic tensor

KW - strain tensor characterization

KW - third-harmonic generation

UR - http://www.scopus.com/inward/record.url?scp=85063676431&partnerID=8YFLogxK

U2 - 10.1002/adma.201808160

DO - 10.1002/adma.201808160

M3 - Article

VL - 31

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 19

M1 - 1808160

ER -

ID: 33002733