Undulator X-ray topographic study of silicon carbide using back-reflection geometry.

T. Tuomi; T. Koljonen; M. Karilahti; P. Äyräs

Undulator X-ray topographic study of silicon carbide using back-reflection geometry.

T. Tuomi
, T. Koljonen
, M. Karilahti
, P. Äyräs

Research output: Working paper › Professional

Original language	English
Place of Publication	Germany
Pages	885
Publication status	Published - 1995
MoE publication type	D4 Published development or research report or study

Keywords

synchrotron X-ray topography, semiconductors

Cite this

@techreport{36988c901a6f4955a0d49b5a138d8bf5,

title = "Undulator X-ray topographic study of silicon carbide using back-reflection geometry.",

keywords = "synchrotron X-ray topography, semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography, semiconductors",

author = "T. Tuomi and T. Koljonen and M. Karilahti and P. {\"A}yr{\"a}s",

year = "1995",

language = "English",

pages = "885",

type = "WorkingPaper",

}

TY - UNPB

T1 - Undulator X-ray topographic study of silicon carbide using back-reflection geometry.

AU - Tuomi, T.

AU - Koljonen, T.

AU - Karilahti, M.

AU - Äyräs, P.

PY - 1995

Y1 - 1995

KW - synchrotron X-ray topography, semiconductors

M3 - Working paper

SP - 885

BT - Undulator X-ray topographic study of silicon carbide using back-reflection geometry.

CY - Germany

ER -