Undulator X-ray topographic study of silicon carbide using back-reflection geometry.

T. Tuomi, T. Koljonen, M. Karilahti, P. Äyräs

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationGermany
    Pages885
    Publication statusPublished - 1995
    MoE publication typeD4 Published development or research report or study

    Keywords

    • synchrotron X-ray topography, semiconductors

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