Undoped p-type GaN1-xSbx alloys: Effects of annealing

Research output: Contribution to journalArticleScientificpeer-review


  • N. Segercrantz
  • Y. Baumgartner
  • M. Ting
  • K. M. Yu
  • S. S. Mao
  • W. L. Sarney
  • S. P. Svensson
  • W. Walukiewicz

Research units

  • Lawrence Berkeley National Laboratory
  • EPFL Valais Wallis
  • University of California at Berkeley
  • City University of Hong Kong
  • United States Army Research Laboratory


We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.


Original languageEnglish
Article number252102
Pages (from-to)1-5
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 19 Dec 2016
MoE publication typeA1 Journal article-refereed

Download statistics

No data available

ID: 10309182