Understanding materials compatibility issues in electronics packaging

M. Paulasto-Kröckel; T. Laurila; V. Vuorinen

doi:10.1109/EPTC.2009.5416496

Understanding materials compatibility issues in electronics packaging

M. Paulasto-Kröckel^*, T. Laurila, V. Vuorinen

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

This paper presents a method, which helps to understand and control interactions between dissimilar materials in electronics packaging assemblies. The method consisting of thermodynamic and kinetic modeling combined with detailed microstructural analysis is introduced first. The method will then be demonstrated using three examples. First one is taken from an IC metallization level, and explains why and how TaC diffusion barrier reacts with Si. The second example discusses the impact of Cu on the microstructural evolution and degradation of Au-Al bonds. Finally, the third example deals with solder alloy reactions with Ni/Au pad finishes at a circuit board. The results presented explain the redeposition of AuSn₄ phase at the pad interface when SnPbAg or SnAg solders are used.

Original language	English
Title of host publication	Proceedings of the Electronic Packaging Technology Conference, EPTC
Pages	494-499
Number of pages	6
DOIs	https://doi.org/10.1109/EPTC.2009.5416496
Publication status	Published - 2009
MoE publication type	A4 Conference publication
Event	Electronics Packaging Technology Conference - Singapore, Singapore Duration: 9 Dec 2009 → 11 Dec 2009 Conference number: 11

Conference

Conference	Electronics Packaging Technology Conference
Abbreviated title	EPTC
Country/Territory	Singapore
City	Singapore
Period	09/12/2009 → 11/12/2009

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10.1109/EPTC.2009.5416496

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title = "Understanding materials compatibility issues in electronics packaging",

abstract = "This paper presents a method, which helps to understand and control interactions between dissimilar materials in electronics packaging assemblies. The method consisting of thermodynamic and kinetic modeling combined with detailed microstructural analysis is introduced first. The method will then be demonstrated using three examples. First one is taken from an IC metallization level, and explains why and how TaC diffusion barrier reacts with Si. The second example discusses the impact of Cu on the microstructural evolution and degradation of Au-Al bonds. Finally, the third example deals with solder alloy reactions with Ni/Au pad finishes at a circuit board. The results presented explain the redeposition of AuSn4 phase at the pad interface when SnPbAg or SnAg solders are used.",

author = "M. Paulasto-Kr{\"o}ckel and T. Laurila and V. Vuorinen",

year = "2009",

doi = "10.1109/EPTC.2009.5416496",

language = "English",

isbn = "9781424451005",

pages = "494--499",

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note = "Electronics Packaging Technology Conference, EPTC ; Conference date: 09-12-2009 Through 11-12-2009",

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TY - GEN

T1 - Understanding materials compatibility issues in electronics packaging

AU - Paulasto-Kröckel, M.

AU - Laurila, T.

AU - Vuorinen, V.

N1 - Conference code: 11

PY - 2009

Y1 - 2009

N2 - This paper presents a method, which helps to understand and control interactions between dissimilar materials in electronics packaging assemblies. The method consisting of thermodynamic and kinetic modeling combined with detailed microstructural analysis is introduced first. The method will then be demonstrated using three examples. First one is taken from an IC metallization level, and explains why and how TaC diffusion barrier reacts with Si. The second example discusses the impact of Cu on the microstructural evolution and degradation of Au-Al bonds. Finally, the third example deals with solder alloy reactions with Ni/Au pad finishes at a circuit board. The results presented explain the redeposition of AuSn4 phase at the pad interface when SnPbAg or SnAg solders are used.

AB - This paper presents a method, which helps to understand and control interactions between dissimilar materials in electronics packaging assemblies. The method consisting of thermodynamic and kinetic modeling combined with detailed microstructural analysis is introduced first. The method will then be demonstrated using three examples. First one is taken from an IC metallization level, and explains why and how TaC diffusion barrier reacts with Si. The second example discusses the impact of Cu on the microstructural evolution and degradation of Au-Al bonds. Finally, the third example deals with solder alloy reactions with Ni/Au pad finishes at a circuit board. The results presented explain the redeposition of AuSn4 phase at the pad interface when SnPbAg or SnAg solders are used.

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U2 - 10.1109/EPTC.2009.5416496

DO - 10.1109/EPTC.2009.5416496

M3 - Conference article in proceedings

AN - SCOPUS:77950958774

SN - 9781424451005

SP - 494

EP - 499

BT - Proceedings of the Electronic Packaging Technology Conference, EPTC

T2 - Electronics Packaging Technology Conference

Y2 - 9 December 2009 through 11 December 2009

ER -

Understanding materials compatibility issues in electronics packaging

Abstract

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