Understanding materials compatibility issues in electronics packaging

M. Paulasto-Kröckel*, T. Laurila, V. Vuorinen

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    This paper presents a method, which helps to understand and control interactions between dissimilar materials in electronics packaging assemblies. The method consisting of thermodynamic and kinetic modeling combined with detailed microstructural analysis is introduced first. The method will then be demonstrated using three examples. First one is taken from an IC metallization level, and explains why and how TaC diffusion barrier reacts with Si. The second example discusses the impact of Cu on the microstructural evolution and degradation of Au-Al bonds. Finally, the third example deals with solder alloy reactions with Ni/Au pad finishes at a circuit board. The results presented explain the redeposition of AuSn4 phase at the pad interface when SnPbAg or SnAg solders are used.

    Original languageEnglish
    Title of host publicationProceedings of the Electronic Packaging Technology Conference, EPTC
    Pages494-499
    Number of pages6
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA4 Article in a conference publication
    EventElectronics Packaging Technology Conference - Singapore, Singapore
    Duration: 9 Dec 200911 Dec 2009
    Conference number: 11

    Conference

    ConferenceElectronics Packaging Technology Conference
    Abbreviated titleEPTC
    CountrySingapore
    CitySingapore
    Period09/12/200911/12/2009

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