Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires

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Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires. / Trukhin, V. N.; Bouravleuv, A. D.; Mustafin, I. A.; Cirlin, G. E.; Kakko, J. P.; Lipsanen, H.

In: Semiconductors, Vol. 52, No. 1, 01.01.2018, p. 19-23.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Trukhin, VN, Bouravleuv, AD, Mustafin, IA, Cirlin, GE, Kakko, JP & Lipsanen, H 2018, 'Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires', Semiconductors, vol. 52, no. 1, pp. 19-23. https://doi.org/10.1134/S1063782618010244

APA

Trukhin, V. N., Bouravleuv, A. D., Mustafin, I. A., Cirlin, G. E., Kakko, J. P., & Lipsanen, H. (2018). Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires. Semiconductors, 52(1), 19-23. https://doi.org/10.1134/S1063782618010244

Vancouver

Author

Trukhin, V. N. ; Bouravleuv, A. D. ; Mustafin, I. A. ; Cirlin, G. E. ; Kakko, J. P. ; Lipsanen, H. / Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires. In: Semiconductors. 2018 ; Vol. 52, No. 1. pp. 19-23.

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@article{f740a3a8ebb348d7a96944c1d7068bde,
title = "Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires",
abstract = "Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.",
author = "Trukhin, {V. N.} and Bouravleuv, {A. D.} and Mustafin, {I. A.} and Cirlin, {G. E.} and Kakko, {J. P.} and H. Lipsanen",
year = "2018",
month = "1",
day = "1",
doi = "10.1134/S1063782618010244",
language = "English",
volume = "52",
pages = "19--23",
journal = "Semiconductors",
issn = "1063-7826",
number = "1",

}

RIS - Download

TY - JOUR

T1 - Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires

AU - Trukhin, V. N.

AU - Bouravleuv, A. D.

AU - Mustafin, I. A.

AU - Cirlin, G. E.

AU - Kakko, J. P.

AU - Lipsanen, H.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.

AB - Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.

UR - http://www.scopus.com/inward/record.url?scp=85042110831&partnerID=8YFLogxK

U2 - 10.1134/S1063782618010244

DO - 10.1134/S1063782618010244

M3 - Article

VL - 52

SP - 19

EP - 23

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

ER -

ID: 18126891