Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)19-23
Number of pages5
JournalSemiconductors
Volume52
Issue number1
Publication statusPublished - 1 Jan 2018
MoE publication typeA1 Journal article-refereed

Researchers

  • V. N. Trukhin
  • A. D. Bouravleuv
  • I. A. Mustafin
  • G. E. Cirlin
  • J. P. Kakko
  • Harri Lipsanen

Research units

  • RAS - Ioffe Physico Technical Institute
  • St. Petersburg National Research University Academic of the Russian Academy of Sciences
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)

Abstract

Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.

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