Ultra low power beta multiplier-based current reference circuit

Shailesh Singh Chouhan*, Kari Halonen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

This work presents a current reference circuit fabricated in a standard 0.18 μm CMOS technology. The reference current is obtained by applying thermal compensation voltage in the conventional self-biased or beta multiplier-based current reference circuit. Eight prototypes of the proposed architecture were measured which have resulted into the mean reference current of 26.1 nA with the temperature coefficient of 202.1 ppm/°C. These measurements were performed in the temperature range of − 40 to + 85 °C. The circuit is capable of working over the supply voltage range of 1–2 V with the measured mean line sensitivity of 2.18%/V. The maximum measured power dissipation of the circuit is 104 nW at 2 V.

Original languageEnglish
Pages (from-to)523-529
Number of pages7
JournalAnalog Integrated Circuits and Signal Processing
Volume93
Issue number3
DOIs
Publication statusPublished - Dec 2017
MoE publication typeA1 Journal article-refereed

Keywords

  • Beta multiplier circuit
  • Biasing network
  • Reference circuit
  • Reference current generation
  • Ultra low power

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