Abstract
This work presents a current reference circuit fabricated in a standard 0.18 μm CMOS technology. The reference current is obtained by applying thermal compensation voltage in the conventional self-biased or beta multiplier-based current reference circuit. Eight prototypes of the proposed architecture were measured which have resulted into the mean reference current of 26.1 nA with the temperature coefficient of 202.1 ppm/°C. These measurements were performed in the temperature range of − 40 to + 85 °C. The circuit is capable of working over the supply voltage range of 1–2 V with the measured mean line sensitivity of 2.18%/V. The maximum measured power dissipation of the circuit is 104 nW at 2 V.
Original language | English |
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Pages (from-to) | 523-529 |
Number of pages | 7 |
Journal | Analog Integrated Circuits and Signal Processing |
Volume | 93 |
Issue number | 3 |
DOIs | |
Publication status | Published - Dec 2017 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Beta multiplier circuit
- Biasing network
- Reference circuit
- Reference current generation
- Ultra low power