Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

L. C. Phillips; A. Lombardo; M. Ghidini; W. Yan; S. Kar-Narayan; S. J. Hämäläinen; M. Barbone; S. Milana; S. Van Dijken; A. C. Ferrari; N. D. Mathur

doi:10.1063/1.4942778

Tunnelling anisotropic magnetoresistance at La_0.67Sr_0.33MnO₃-graphene interfaces

L. C. Phillips, A. Lombardo, M. Ghidini, W. Yan, S. Kar-Narayan, S. J. Hämäläinen, M. Barbone, S. Milana, S. Van Dijken, A. C. Ferrari, N. D. Mathur

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Abstract

Using ferromagnetic La_0.67Sr_0.33MnO₃ electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La_0.67Sr_0.33MnO₃-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

Original language	English
Article number	112405
Pages (from-to)	1-5
Journal	Applied Physics Letters
Volume	108
Issue number	11
DOIs	https://doi.org/10.1063/1.4942778
Publication status	Published - 14 Mar 2016
MoE publication type	A1 Journal article-refereed

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title = "Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces",

abstract = "Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.",

author = "Phillips, {L. C.} and A. Lombardo and M. Ghidini and W. Yan and S. Kar-Narayan and H{\"a}m{\"a}l{\"a}inen, {S. J.} and M. Barbone and S. Milana and {Van Dijken}, S. and Ferrari, {A. C.} and Mathur, {N. D.}",

year = "2016",

month = mar,

day = "14",

doi = "10.1063/1.4942778",

language = "English",

volume = "108",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

AU - Phillips, L. C.

AU - Lombardo, A.

AU - Ghidini, M.

AU - Yan, W.

AU - Kar-Narayan, S.

AU - Hämäläinen, S. J.

AU - Barbone, M.

AU - Milana, S.

AU - Van Dijken, S.

AU - Ferrari, A. C.

AU - Mathur, N. D.

PY - 2016/3/14

Y1 - 2016/3/14

N2 - Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

AB - Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

UR - http://www.scopus.com/inward/record.url?scp=84962551297&partnerID=8YFLogxK

U2 - 10.1063/1.4942778

DO - 10.1063/1.4942778

M3 - Article

AN - SCOPUS:84962551297

SN - 0003-6951

VL - 108

SP - 1

EP - 5

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112405

ER -

Tunnelling anisotropic magnetoresistance at La_0.67Sr_0.33MnO₃-graphene interfaces

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