Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

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Abstract

The current-voltage (I-V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of m* 1- = 0:237m0 is obtained.

Details

Original languageEnglish
Article number070201
Pages (from-to)1-2
Number of pages2
JournalJapanese Journal of Applied Physics
Volume48
Issue number7R
Publication statusPublished - Jul 2009
MoE publication typeA1 Journal article-refereed

ID: 4219848