Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes
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The current-voltage (I-V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of m* 1- = 0:237m0 is obtained.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics|
|Publication status||Published - Jul 2009|
|MoE publication type||A1 Journal article-refereed|