Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Victor-Tapio Rangel-Kuoppa, Sami Suihkonen, Markku Sopanen, Harri Lipsanen

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    The current-voltage (I-V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of m* 1- = 0:237m0 is obtained.

    Original languageEnglish
    Article number070201
    Pages (from-to)1-2
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume48
    Issue number7R
    DOIs
    Publication statusPublished - Jul 2009
    MoE publication typeA1 Journal article-refereed

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