Tunneling Current Characteristics of Plasma Oxidized Ultrathin SiO2

T. Tuurnala; T. Majamaa

Tunneling Current Characteristics of Plasma Oxidized Ultrathin SiO2

T. Tuurnala
, T. Majamaa

Department of Electrical Engineering and Automation

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Original language	English
Pages (from-to)	310-311
Journal	Physica Scripta
Volume	T69
Publication status	Published - 1997
MoE publication type	A1 Journal article-refereed

Keywords

silicon dioxide
tunneling current
ultrathin

Cite this

@article{f57c6bac2c844b7e9c955eb8ad4f87c4,

title = "Tunneling Current Characteristics of Plasma Oxidized Ultrathin SiO2",

keywords = "silicon dioxide, tunneling current, ultrathin, silicon dioxide, tunneling current, ultrathin, silicon dioxide, tunneling current, ultrathin",

author = "T. Tuurnala and T. Majamaa",

year = "1997",

language = "English",

volume = "T69",

pages = "310--311",

journal = "Physica Scripta",

issn = "1402-4896",

publisher = "Institute of Physics Publishing",

}

TY - JOUR

T1 - Tunneling Current Characteristics of Plasma Oxidized Ultrathin SiO2

AU - Tuurnala, T.

AU - Majamaa, T.

PY - 1997

Y1 - 1997

KW - silicon dioxide

KW - tunneling current

KW - ultrathin

KW - silicon dioxide

KW - tunneling current

KW - ultrathin

KW - silicon dioxide

KW - tunneling current

KW - ultrathin

M3 - Article

SN - 1402-4896

VL - T69

SP - 310

EP - 311

JO - Physica Scripta

JF - Physica Scripta

ER -