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Abstract
Graphene-based van der Waals heterostructures are promising building blocks for broadband photodetection because of the gapless nature of graphene. However, their performance is mostly limited by the inevitable trade-off between low dark current and photocurrent generation. Here, we demonstrate a hybrid photodetection mode based on the photogating effect coupled with the photovoltaic effect via tunable quantum tunneling through the unique graphene/Bi2Se3 heterointerface. The tunneling junction formed between the semimetallic graphene and the topologically insulating Bi2Se3 exhibits asymmetric rectifying and hysteretic current-voltage characteristics, which significantly suppresses the dark current and enhances the photocurrent. The photocurrent-to-dark current ratio increases by about a factor of 10 with the electrical tuning of tunneling resistance for efficient light detection covering the major photonic spectral band from the visible to the mid-infrared ranges. Our findings provide a novel concept of using tunable quantum tunneling for highly sensitive broadband photodetection in mixed-dimensional van der Waals heterostructures.
Original language | English |
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Pages (from-to) | 58927-58935 |
Number of pages | 9 |
Journal | ACS applied materials & interfaces |
Volume | 13 |
Issue number | 49 |
DOIs | |
Publication status | Published - 15 Dec 2021 |
MoE publication type | A1 Journal article-refereed |
Keywords
- tunable quantum tunneling
- graphene
- topological insulator
- heterointerface
- asymmetric barrier
- hybrid photodetection
- 2-DIMENSIONAL MATERIALS
- BROAD-BAND
- HETEROSTRUCTURES
- RESISTANCE
- TRANSPORT
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