Transport properties of EuO at ferromagnetic resonance

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  • Helsinki University of Technology

Abstract

Some transport properties of the magnetic semiconductor EuO have been measured at the ferromagnetic resonance (FMR). A static voltage appeared when the contacts on the sample were unsymmetrially located with respect to the external magnetic field. The induced static field was linearly proportional to the microwave power, the static electric field/microwave power ratio being 5×10−4 V/W mm. A change in sign of the static voltage was found when the angle between external magnetic field and microwave magnetic field was changed through 90 degree. To explain the appearance of the static voltage two models have been analyzed, electrodynamic interaction and magnon drag. The electrodynamic interaction model seems to fit better. A decrease in the sample resistivity at FMR was also observed, the change being 6 per cent.

Details

Original languageEnglish
Pages (from-to)1595-1597
JournalJournal of Applied Physics
Volume49
Issue number3
Publication statusPublished - 1978
MoE publication typeA1 Journal article-refereed

ID: 9921900