Transport characteristics of magnetite thin films grown onto GaAs substrates

S. M. Watts*, K. Nakajima, S. van Dijken, J. M D Coey

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

37 Citations (Scopus)

Abstract

The transport characteristics of magnetite thin films with a preferred (111) orientation were discussed. The thin films had been deposited dc magnetron sputtering from a pure Fe target onto (100) GaAs substrates at 400 °C. The asymmetric current-voltage (I-V) characteristics with a Schottky diodelike behavior in forward bias was obtained for films deposited onto semiconducting n-type GaAs substrates. The results show that the activation energy plots of the I-V data as a function of temperature indicate a barrier height of depletion layer in these junctions.

Original languageEnglish
Pages (from-to)7465-7467
Number of pages3
JournalJournal of Applied Physics
Volume95
Issue number11 II
DOIs
Publication statusPublished - 1 Jun 2004
MoE publication typeA1 Journal article-refereed

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