Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition

T. S. Tripathi; C. S. Yadav; M. Karppinen

doi:10.1063/1.4946884

Transparent ferrimagnetic semiconducting CuCr₂O₄ thin films by atomic layer deposition

Indian Institute of Technology Mandi

Research output: Contribution to journal › Article › Scientific › peer-review

20 Citations (Scopus)

373 Downloads (Pure)

Abstract

We report the magnetic and optical properties of CuCr₂O₄ thin films fabricated by atomic layer deposition (ALD) from Cu(thd)₂, Cr(acac)₃, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr₂O₄ films are interesting material candidates for various frontier applications.

Original language	English
Article number	046106
Journal	APL Materials
Volume	4
Issue number	4
DOIs	https://doi.org/10.1063/1.4946884
Publication status	Published - 1 Apr 2016
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.4946884Licence: CC BY

ERC-18Final published version, 1.49 MBLicence: CC BY

Cite this

@article{baba877600704479b499037d1a2f810b,

title = "Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition",

abstract = "We report the magnetic and optical properties of CuCr2O4 thin films fabricated by atomic layer deposition (ALD) from Cu(thd)2, Cr(acac)3, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr2O4 films are interesting material candidates for various frontier applications.",

author = "Tripathi, \{T. S.\} and Yadav, \{C. S.\} and M. Karppinen",

note = "| openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT",

year = "2016",

month = apr,

day = "1",

doi = "10.1063/1.4946884",

language = "English",

volume = "4",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition

AU - Tripathi, T. S.

AU - Yadav, C. S.

AU - Karppinen, M.

N1 - | openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT

PY - 2016/4/1

Y1 - 2016/4/1

N2 - We report the magnetic and optical properties of CuCr2O4 thin films fabricated by atomic layer deposition (ALD) from Cu(thd)2, Cr(acac)3, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr2O4 films are interesting material candidates for various frontier applications.

AB - We report the magnetic and optical properties of CuCr2O4 thin films fabricated by atomic layer deposition (ALD) from Cu(thd)2, Cr(acac)3, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr2O4 films are interesting material candidates for various frontier applications.

UR - https://www.scopus.com/pages/publications/84968649859

U2 - 10.1063/1.4946884

DO - 10.1063/1.4946884

M3 - Article

AN - SCOPUS:84968649859

SN - 2166-532X

VL - 4

JO - APL Materials

JF - APL Materials

IS - 4

M1 - 046106

ER -

Transparent ferrimagnetic semiconducting CuCr₂O₄ thin films by atomic layer deposition

Abstract

Access to Document

Other files and links

Fingerprint

Molecular-Layer-Engineered Inorganic-Organic Hybrid Materials

Cite this

Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition

Abstract

Access to Document

Other files and links

Fingerprint

Projects

Molecular-Layer-Engineered Inorganic-Organic Hybrid Materials

Cite this

Transparent ferrimagnetic semiconducting CuCr₂O₄ thin films by atomic layer deposition