Tracking defect-induced ferromagnetism in GaN:Gd

M. Roever, J. Malindretos, A. Bedoya-Pinto, A. Rizzi, C. Rauch, F. Tuomisto

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Abstract

We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 1019 cm−3 might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support a direct connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen codoping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd-doped GaN.
Original languageEnglish
Article number081201
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B
Volume84
Issue number8
DOIs
Publication statusPublished - Aug 2011
MoE publication typeA1 Journal article-refereed

Keywords

  • defects
  • ferromagnetism
  • GaN

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