Toward Effective Gettering in Boron-Implanted Silicon Solar Cells

Hannu S. Laine; Ville Vahanissi; Zhengjun Liu; Ernesto Magana; Ashley E. Morishige; Jan Kruegener; Kristian Salo; Barry Lai; Hele Savin; David P. Fenning

doi:10.1109/PVSC.2017.8366071

Toward Effective Gettering in Boron-Implanted Silicon Solar Cells

Hannu S. Laine^*
, Ville Vahanissi
, Zhengjun Liu
, Ernesto Magana
, Ashley E. Morishige
, Jan Kruegener
, Kristian Salo
, Barry Lai
, Hele Savin
, David P. Fenning

^*Corresponding author for this work

University of California, San Diego
Massachusetts Institute of Technology
Leibniz Universität Hannover
Argonne National Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Boron-implantation is a pathway to high-quality, low-cost emitters required to the industry standard BBr3 diffusion, B-implant requires no edge isolation or boron rich layer (BRL) removal, which reduces manufacturing complexity and cost. B-implant also offers easy control of the dopant profile, which can translate to lower emitter saturation current density (j(0e)) and thus higher cell efficiencies. In addition to low emitter saturation current density, an important property of the emitter is its gettering efficiency, or its ability to reduce recombination active bulk defects that degrade bulk minority charge carrier diffusion length. Here, we perform a controlled experiment to map the potential of high-quality (j(0e) <50 fA/cm(2)) B-implanted emitters to reduce bulk iron point defects. We show that the point defect concentration can be reduced by more than 99.9 %. We describe efforts to generalize our results and elucidate the underlying gettering mechanisms via predictive modeling.

Original language	English
Title of host publication	Proceedings of the 44th IEEE Photovoltaic Specialists Conference (PVSC)
Publisher	IEEE
Pages	1494-1497
Number of pages	4
ISBN (Print)	978-1-5090-5605-7
DOIs	https://doi.org/10.1109/PVSC.2017.8366071
Publication status	Published - 2017
MoE publication type	A4 Conference publication
Event	IEEE Photovoltaic Specialists Conference - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017 Conference number: 44

Conference

Conference	IEEE Photovoltaic Specialists Conference
Abbreviated title	PVSC
Country/Territory	United States
City	Washington
Period	25/06/2017 → 30/06/2017

Funding

This research used resources of the Advanced Photon Source, a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. This material is based upon work supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. The Aalto University authors acknowledge the financial support from the Finnish Funding Agency for Innovation under project "BLACK" (project No. 2956/31/2014), Academy of Finland, Okmetic Oyj and Semilab Inc, as well as the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre. H. S. L. acknowledges the Fulbright Technology Industries of Finland grant as well as support from Finnish Cultural Foundation and Walter Ahlstrom Foundation. E.M. and D.P.F. acknowledge the support of startup funds from the University of California, San Diego.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

silicon
boron
ion-implantation
gettering
iron
modeling
IRON
MECHANISMS

Access to Document

10.1109/PVSC.2017.8366071

Cite this

@inproceedings{b68ac78dafc74f6b9e6f7ac8b1a33437,

title = "Toward Effective Gettering in Boron-Implanted Silicon Solar Cells",

abstract = "Boron-implantation is a pathway to high-quality, low-cost emitters required to the industry standard BBr3 diffusion, B-implant requires no edge isolation or boron rich layer (BRL) removal, which reduces manufacturing complexity and cost. B-implant also offers easy control of the dopant profile, which can translate to lower emitter saturation current density (j(0e)) and thus higher cell efficiencies. In addition to low emitter saturation current density, an important property of the emitter is its gettering efficiency, or its ability to reduce recombination active bulk defects that degrade bulk minority charge carrier diffusion length. Here, we perform a controlled experiment to map the potential of high-quality (j(0e) <50 fA/cm(2)) B-implanted emitters to reduce bulk iron point defects. We show that the point defect concentration can be reduced by more than 99.9 \%. We describe efforts to generalize our results and elucidate the underlying gettering mechanisms via predictive modeling.",

keywords = "silicon, boron, ion-implantation, gettering, iron, modeling, IRON, MECHANISMS",

author = "Laine, \{Hannu S.\} and Ville Vahanissi and Zhengjun Liu and Ernesto Magana and Morishige, \{Ashley E.\} and Jan Kruegener and Kristian Salo and Barry Lai and Hele Savin and Fenning, \{David P.\}",

year = "2017",

doi = "10.1109/PVSC.2017.8366071",

language = "English",

isbn = "978-1-5090-5605-7",

pages = "1494--1497",

booktitle = "Proceedings of the 44th IEEE Photovoltaic Specialists Conference (PVSC)",

publisher = "IEEE",

address = "United States",

note = "IEEE Photovoltaic Specialists Conference, PVSC ; Conference date: 25-06-2017 Through 30-06-2017",

}

Laine, HS, Vahanissi, V , Liu, Z, Magana, E, Morishige, AE, Kruegener, J, Salo, K, Lai, B, Savin, H & Fenning, DP 2017, Toward Effective Gettering in Boron-Implanted Silicon Solar Cells. in Proceedings of the 44th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, pp. 1494-1497, IEEE Photovoltaic Specialists Conference, Washington, District of Columbia, United States, 25/06/2017. https://doi.org/10.1109/PVSC.2017.8366071

TY - GEN

T1 - Toward Effective Gettering in Boron-Implanted Silicon Solar Cells

AU - Laine, Hannu S.

AU - Vahanissi, Ville

AU - Liu, Zhengjun

AU - Magana, Ernesto

AU - Morishige, Ashley E.

AU - Kruegener, Jan

AU - Salo, Kristian

AU - Lai, Barry

AU - Savin, Hele

AU - Fenning, David P.

N1 - Conference code: 44

PY - 2017

Y1 - 2017

N2 - Boron-implantation is a pathway to high-quality, low-cost emitters required to the industry standard BBr3 diffusion, B-implant requires no edge isolation or boron rich layer (BRL) removal, which reduces manufacturing complexity and cost. B-implant also offers easy control of the dopant profile, which can translate to lower emitter saturation current density (j(0e)) and thus higher cell efficiencies. In addition to low emitter saturation current density, an important property of the emitter is its gettering efficiency, or its ability to reduce recombination active bulk defects that degrade bulk minority charge carrier diffusion length. Here, we perform a controlled experiment to map the potential of high-quality (j(0e) <50 fA/cm(2)) B-implanted emitters to reduce bulk iron point defects. We show that the point defect concentration can be reduced by more than 99.9 %. We describe efforts to generalize our results and elucidate the underlying gettering mechanisms via predictive modeling.

AB - Boron-implantation is a pathway to high-quality, low-cost emitters required to the industry standard BBr3 diffusion, B-implant requires no edge isolation or boron rich layer (BRL) removal, which reduces manufacturing complexity and cost. B-implant also offers easy control of the dopant profile, which can translate to lower emitter saturation current density (j(0e)) and thus higher cell efficiencies. In addition to low emitter saturation current density, an important property of the emitter is its gettering efficiency, or its ability to reduce recombination active bulk defects that degrade bulk minority charge carrier diffusion length. Here, we perform a controlled experiment to map the potential of high-quality (j(0e) <50 fA/cm(2)) B-implanted emitters to reduce bulk iron point defects. We show that the point defect concentration can be reduced by more than 99.9 %. We describe efforts to generalize our results and elucidate the underlying gettering mechanisms via predictive modeling.

KW - silicon

KW - boron

KW - ion-implantation

KW - gettering

KW - iron

KW - modeling

KW - IRON

KW - MECHANISMS

U2 - 10.1109/PVSC.2017.8366071

DO - 10.1109/PVSC.2017.8366071

M3 - Conference article in proceedings

SN - 978-1-5090-5605-7

SP - 1494

EP - 1497

BT - Proceedings of the 44th IEEE Photovoltaic Specialists Conference (PVSC)

PB - IEEE

T2 - IEEE Photovoltaic Specialists Conference

Y2 - 25 June 2017 through 30 June 2017

ER -

Toward Effective Gettering in Boron-Implanted Silicon Solar Cells

Abstract

Conference

Funding

UN SDGs

Keywords

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