Toward Effective Gettering in Boron-Implanted Silicon Solar Cells

Hannu S. Laine*, Ville Vahanissi, Zhengjun Liu, Ernesto Magana, Ashley E. Morishige, Jan Kruegener, Kristian Salo, Barry Lai, Hele Savin, David P. Fenning

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

Boron-implantation is a pathway to high-quality, low-cost emitters required to the industry standard BBr3 diffusion, B-implant requires no edge isolation or boron rich layer (BRL) removal, which reduces manufacturing complexity and cost. B-implant also offers easy control of the dopant profile, which can translate to lower emitter saturation current density (j(0e)) and thus higher cell efficiencies. In addition to low emitter saturation current density, an important property of the emitter is its gettering efficiency, or its ability to reduce recombination active bulk defects that degrade bulk minority charge carrier diffusion length. Here, we perform a controlled experiment to map the potential of high-quality (j(0e) <50 fA/cm(2)) B-implanted emitters to reduce bulk iron point defects. We show that the point defect concentration can be reduced by more than 99.9 %. We describe efforts to generalize our results and elucidate the underlying gettering mechanisms via predictive modeling.

Original languageEnglish
Title of host publication2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)
PublisherIEEE
Pages1494-1497
Number of pages4
ISBN (Print)978-1-5090-5605-7
DOIs
Publication statusPublished - 2017
MoE publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialists Conference - Washington, United States
Duration: 25 Jun 201730 Jun 2017
Conference number: 44

Publication series

NameIEEE Photovoltaic Specialists Conference
PublisherIEEE
ISSN (Print)0160-8371

Conference

ConferenceIEEE Photovoltaic Specialists Conference
Abbreviated titlePVSC
CountryUnited States
CityWashington
Period25/06/201730/06/2017

Keywords

  • silicon
  • boron
  • ion-implantation
  • gettering
  • iron
  • modeling
  • IRON
  • MECHANISMS

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