TiSrantisite: An abundant point defect in SrTiO3

Antti Karjalainen; Vera Prozheeva; Ilja Makkonen; Christo Guguschev; Toni Markurt; Matthias Bickermann; Filip Tuomisto

doi:10.1063/5.0010304

Ti_Srantisite: An abundant point defect in SrTiO₃

Antti Karjalainen, Vera Prozheeva, Ilja Makkonen, Christo Guguschev, Toni Markurt, Matthias Bickermann, Filip Tuomisto^*

^*Corresponding author for this work

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We present a systematic study of the positron lifetime as a function of measurement temperature in strontium titanate (SrTiO3) single crystals grown in different conditions and by different synthesis methods. We combine our experimental results with state-of-the-art theoretical calculations of positron annihilation parameters. We find that the essentially omnipresent 180-190 ps lifetime component is most likely the Ti Sr antisite defect, possibly coupled with one or more oxygen vacancies, supporting the importance of the Ti Sr antisite related defects in SrTiO3.

Original language	English
Article number	245702
Number of pages	9
Journal	Journal of Applied Physics
Volume	127
Issue number	24
DOIs	https://doi.org/10.1063/5.0010304
Publication status	Published - 28 Jun 2020
MoE publication type	A1 Journal article-refereed

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10.1063/5.0010304

Karjalainen_Tisr_Antisite.5.0010304Final published version, 1.45 MB

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title = "TiSrantisite: An abundant point defect in SrTiO3",

abstract = "We present a systematic study of the positron lifetime as a function of measurement temperature in strontium titanate (SrTiO3) single crystals grown in different conditions and by different synthesis methods. We combine our experimental results with state-of-the-art theoretical calculations of positron annihilation parameters. We find that the essentially omnipresent 180-190 ps lifetime component is most likely the Ti Sr antisite defect, possibly coupled with one or more oxygen vacancies, supporting the importance of the Ti Sr antisite related defects in SrTiO3.",

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T2 - An abundant point defect in SrTiO3

AU - Karjalainen, Antti

AU - Prozheeva, Vera

AU - Makkonen, Ilja

AU - Guguschev, Christo

AU - Markurt, Toni

AU - Bickermann, Matthias

AU - Tuomisto, Filip

PY - 2020/6/28

Y1 - 2020/6/28

N2 - We present a systematic study of the positron lifetime as a function of measurement temperature in strontium titanate (SrTiO3) single crystals grown in different conditions and by different synthesis methods. We combine our experimental results with state-of-the-art theoretical calculations of positron annihilation parameters. We find that the essentially omnipresent 180-190 ps lifetime component is most likely the Ti Sr antisite defect, possibly coupled with one or more oxygen vacancies, supporting the importance of the Ti Sr antisite related defects in SrTiO3.

AB - We present a systematic study of the positron lifetime as a function of measurement temperature in strontium titanate (SrTiO3) single crystals grown in different conditions and by different synthesis methods. We combine our experimental results with state-of-the-art theoretical calculations of positron annihilation parameters. We find that the essentially omnipresent 180-190 ps lifetime component is most likely the Ti Sr antisite defect, possibly coupled with one or more oxygen vacancies, supporting the importance of the Ti Sr antisite related defects in SrTiO3.

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JF - Journal of Applied Physics

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Ti_Srantisite: An abundant point defect in SrTiO₃

Abstract

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Large-scale electronic structure techniques for advanced materials characterization

CRYSTRAP: Charge traps in crystalline matter for future technologies

Large-scale electronic structure techniques for advanced materials characterization

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TiSrantisite: An abundant point defect in SrTiO3

Abstract

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Large-scale electronic structure techniques for advanced materials characterization

CRYSTRAP: Charge traps in crystalline matter for future technologies

Large-scale electronic structure techniques for advanced materials characterization

Cite this

Ti_Srantisite: An abundant point defect in SrTiO₃