Time-effective synthesis of rhombohedral CuAlO2 from mesoporous alumina substrate

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Tallinn University of Technology
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)

Abstract

The development of p-type transparent semiconductors with large optical bandgaps and high electrical conductivity is needed for a wide range of applications in optoelectronics and solar cell technologies. The experimental techniques currently used are limited to complex procedures and time consuming processing. In this work, we propose a versatile, simple and reproducible method of rapid reactive dip-coating using a mesoporous network of highly aligned γ-alumina nanofibers for synthesis of delafossite CuAlO2 by a time-effective process of 2 h duration. The rhombohedral CuAlO2 was densified with the help of spark plasma sintering in vacuum. Electrical conductivity improves with increase in annealing temperature while its room temperature value for a sample annealed at 1100 °C was 0.07 S m−1 measured with four-probe method. Direct optical bandgap of 3.79 eV was estimated with the help of diffuse reflection data for the sample sintered at optimal temperature. Both Seebeck coefficient and Hall measurements confirmed the p-type conductivity of the material. Novelty: The major number of CuAlO2 synthesis approaches require complex instrumentation, templating, and long processing time. Therefore, scalable and cost-effective production of CuAlO2 remains a challenge. Herein, we report a rapid synthesis of CuAlO2, in a straightforward and scalable approach, which reduces the processing cost and overal energy consumption of the process.

Details

Original languageEnglish
Pages (from-to)48-55
Number of pages8
JournalMaterials and Design
Volume147
Publication statusPublished - 5 Jun 2018
MoE publication typeA1 Journal article-refereed

    Research areas

  • Copper aluminate, Nanofiber, p-Type transparent semiconductor, Reactive dip-coating, SPS

ID: 18483699