Thermoelectric Characteristics of InAs Nanowire Networks Directly Grown on Flexible Plastic Substrates

Tomi Koskinen*, Vladislav Khayrudinov, Fahimeh Emadi, Hua Jiang, Tuomas Haggren, Harri Lipsanen, Ilkka Tittonen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)
97 Downloads (Pure)

Abstract

III-V semiconductor nanowires have shown promise for thermoelectric applications, but their use in practical devices has conventionally been hindered by complex fabrication processes and device integration. Here, we characterize the thermoelectric properties of InAs nanowire networks directly grown on flexible polyimide plastic. The n-type nanowire networks achieve a high room-temperature Seebeck coefficient of -110.8 mu V K-1 and electrical conductivity of 41 S cm(-1), resulting in a thermoelectric power factor of 50.4 mu W m(-1) K-2. Moreover, the nanowire networks show remarkable mechanical flexibility with a relative change in resistance below 0.01 at bending radii below 5.2 mm. We further establish the thermoelectric performance of InAs nanowire networks on plastic using a facile proof-of-concept thermoelectric generator producing a maximum power of 0.44 nW at a temperature gradient of 5 K. The findings indicate that direct growth of III-V nanowire networks on plastic substrates shows promise for the development of flexible thermoelectrics applications.

Original languageEnglish
Pages (from-to)14727–14734
Number of pages8
JournalACS Applied Energy Materials
Volume4
Issue number12
Early online date2021
DOIs
Publication statusPublished - 27 Dec 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • flexible
  • III-V
  • indium arsenide
  • MOVPE
  • nanowire
  • thermoelectric

Fingerprint

Dive into the research topics of 'Thermoelectric Characteristics of InAs Nanowire Networks Directly Grown on Flexible Plastic Substrates'. Together they form a unique fingerprint.

Cite this