Thermal shot noise in top-gated single carbon nanotube field effect transistors

J. Chaste, E. Pallecchi, P. Morfin, G. Fève, T. Kontos, J.-M. Berroir, P. Hakonen, B. Placais

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The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of one-dimensional nanotransistor. In particular the prediction of a large transconductance correction to the Johnson–Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of 13 μe/Hz⎯⎯⎯⎯⎯√ in the 0.2–0.8 GHz band.
Original languageEnglish
Article number192103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed


  • carbon nanotube
  • shot noise

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