Thermal expansion of silicon at temperatures up to 1100 degrees C

Alexander V. Mazur, Michael M. Gasik*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Thermal expansion of CVD single crystal silicon was measured with a push-rod dilatometer up to 1100 degrees C for different crystallographic orientations of the specimen. Thermal analysis, Laue analysis and X-ray diffraction were used to verify silicon crystal orientation and absence of possible phase transformations. Coefficients of technical thermal expansion have been calculated in this temperature range and their variations with temperature have been demonstrated. These differences might cause anisotropy in thermal stresses, which has been calculated and compared with experimental values of dry-oxidised silicon wafers. (c) 2008 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)723-727
Number of pages5
JournalJournal of Materials Processing Technology
Volume209
Issue number2
DOIs
Publication statusPublished - 19 Jan 2009
MoE publication typeA1 Journal article-refereed

Keywords

  • Silicon
  • Thermal expansion
  • CVD
  • Single crystal
  • Dilatometry
  • Strain
  • MARTENSITIC-TRANSFORMATION

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