Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

R. Zhao, A. Rossi, S. P. Giblin, J. D. Fletcher, F. E. Hudson, M. Möttönen, M. Kataoka, A. S. Dzurak

Research output: Contribution to journalArticleScientificpeer-review

24 Citations (Scopus)
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Abstract

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of ef within a measurement uncertainty as low as 0.27 ppm.

Original languageEnglish
Article number044021
Pages (from-to)1-8
JournalPhysical Review Applied
Volume8
Issue number4
DOIs
Publication statusPublished - 30 Oct 2017
MoE publication typeA1 Journal article-refereed

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