Thermal Creation of Defects in GaTe

A. Zubiaga; J.A. Garcia; F. Plazaola; V. Muñoz-Sanjose; C. Martinez-Tomas

Thermal Creation of Defects in GaTe

A. Zubiaga, J.A. Garcia, F. Plazaola, V. Muñoz-Sanjose, C. Martinez-Tomas

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Journal	Japanese Journal of Applied Physics
Volume	47
Publication status	Published - 2008
MoE publication type	A1 Journal article-refereed

Keywords

GaTe, laminar semiconductor, infrared photoluminescence, annealing

Cite this

@article{5afc863947684537b074e23ad61d1d9c,

title = "Thermal Creation of Defects in GaTe",

keywords = "GaTe, laminar semiconductor, infrared photoluminescence, annealing, GaTe, laminar semiconductor, infrared photoluminescence, annealing, GaTe, laminar semiconductor, infrared photoluminescence, annealing",

author = "A. Zubiaga and J.A. Garcia and F. Plazaola and V. Mu{\~n}oz-Sanjose and C. Martinez-Tomas",

year = "2008",

language = "English",

volume = "47",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Thermal Creation of Defects in GaTe

AU - Zubiaga, A.

AU - Garcia, J.A.

AU - Plazaola, F.

AU - Muñoz-Sanjose, V.

AU - Martinez-Tomas, C.

PY - 2008

Y1 - 2008

KW - GaTe, laminar semiconductor, infrared photoluminescence, annealing

M3 - Article

VL - 47

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

ER -