Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

Tarmo Nieminen*, Tomi Koskinen, Vladimir Kornienko, Glenn Ross, Mervi Paulasto-Kröckel

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Heat accumulation and self-heating have become key issues in microelectronics owing to the ever-decreasing size of components and the move toward three-dimensional structures. A significant challenge for solving these issues is thermally isolating materials, such as silicon dioxide (SiO2), which are commonly used in microelectronics. The silicon-on-insulator (SOI) structure is a great demonstrator of the limitations of SiO2 as the low thermal conductivity insulator prevents heat dissipation through the bottom of a device built on a SOI wafer. Replacing SiO2 with a more thermally conductive material could yield immediate results for improved heat dissipation of SOI structures. However, the introduction of alternate materials creates unknown interfaces, which can have a large impact on the overall thermal conductivity of the structure. In this work, we studied a direct bonded AlN-to-SOI wafer (AlN-SOI) by measuring the thermal conductivity of AlN and the thermal boundary conductance (TBC) of silicon (Si)/AlN and Si/SiO2/aluminum-oxygen-nitrogen (AlON)/AlN interfaces, the latter of which were formed during plasma-activated bonding. The results show that the AlN-SOI possesses superior thermal properties to those of a traditional SOI wafer, with the thermal conductivity of AlN measured at roughly 40 W m-1 K-1 and the TBC of both interfaces at roughly 100 MW m-2 K-1. These results show that AlN-SOI is a very promising structure for improving heat dissipation in future microelectronics.

Original languageEnglish
Pages (from-to)2413-2419
Number of pages7
JournalACS Applied Electronic Materials
Volume6
Issue number4
Early online date11 Apr 2024
DOIs
Publication statusPublished - 23 Apr 2024
MoE publication typeA1 Journal article-refereed

Keywords

  • aluminum nitride
  • silicon-on-insulator
  • thermal boundary conductance
  • thermal conductivity
  • time-domain thermoreflectance

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