Theory of Spin Disorder Scattering in Heavily Mn-Doped GaAs: A Self-Consistent Approach

Research output: Working paper › Professional

Original language	English
Publication status	Published - 2001
MoE publication type	D4 Published development or research report or study

Name	19th Semidonductor Meeting, Kööpenhamina, Tanska, 20.-23.5.2001

Keywords

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title = "Theory of Spin Disorder Scattering in Heavily Mn-Doped GaAs: A Self-Consistent Approach",

keywords = "semiconductor physics, transport properties, semiconductor physics, transport properties, semiconductor physics, transport properties",

author = "Pekka Kuivalainen and Anssi Hovinen",

year = "2001",

language = "English",

series = "19th Semidonductor Meeting, K{\"o}{\"o}penhamina, Tanska, 20.-23.5.2001",

type = "WorkingPaper",

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TY - UNPB

T1 - Theory of Spin Disorder Scattering in Heavily Mn-Doped GaAs: A Self-Consistent Approach

AU - Kuivalainen, Pekka

AU - Hovinen, Anssi

PY - 2001

Y1 - 2001

KW - semiconductor physics

KW - transport properties

KW - semiconductor physics

KW - transport properties

KW - semiconductor physics

KW - transport properties

M3 - Working paper

T3 - 19th Semidonductor Meeting, Kööpenhamina, Tanska, 20.-23.5.2001

BT - Theory of Spin Disorder Scattering in Heavily Mn-Doped GaAs: A Self-Consistent Approach

ER -