Theoretical study of quantum emitters in two-dimensional silicon carbide monolayers

Q. Hassanzada, I. Abdolhosseini Sarsari, A. Hashemi, A. Ghojavand, A. Gali, M. Abdi

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
9 Downloads (Pure)

Abstract

The electronic and optical features of some potential single-photon sources in two-dimensional silicon carbide monolayers is studied via ab initio calculations and group theory analyses. A few point defects in three charge states (negative, positive, and neutral) are considered. By applying performance criteria, Stone-Wales defects without and with combination of antisite defects are studied in detail. The formation energy calculations reveal that neutral and positive charge states of these defects are stable. We compute the zero-phonon-line energy, the Huang-Rhys (HR) factor, and the photoluminescence spectrum for the available transitions in different charge states. The calculated HR values and the related Debye-Waller factors guarantee that the Stone-Wales defects have a high potential of performing as a promising single-photon emitter.

Original languageEnglish
Article number134103
Pages (from-to)1-8
Number of pages8
JournalPhysical Review B
Volume102
Issue number13
DOIs
Publication statusPublished - 7 Oct 2020
MoE publication typeA1 Journal article-refereed

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