Theoretical studies of interstitial boron defects in silicon

Research output: Working paper › Professional

Original language	English
Pages	268-270
Publication status	Published - 1999
MoE publication type	D4 Published development or research report or study

Name	The 20th International Conference on Defects in Semiconductors, Berkeley, USA, 26.-30.7.1999

Cite this

@techreport{430207d41046479eb1e8ccd9ecf68695,

title = "Theoretical studies of interstitial boron defects in silicon",

author = "M. Hakala and M.J. Puska and R.M. Nieminen",

year = "1999",

language = "English",

series = "The 20th International Conference on Defects in Semiconductors, Berkeley, USA, 26.-30.7.1999",

pages = "268--270",

type = "WorkingPaper",

}