Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

S. Schulz, D. S. P. Tanner, E. P. O'Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M.J. Kappers, R.A. Oliver, C.J. Humphreys, D. Sutherland, M.J. Davies, P. Dawson

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Abstract

We present a combined theoretical and experimental analysis of the optical properties of m-plane InGaN/GaN quantum wells. The sample was studied by photoluminescence and photoluminescence excitation spectroscopy at low temperature. The spectra show a large Stokes shift between the lowest exciton peak in the excitation spectra and the peak of the photoluminescence spectrum. This behavior is indicative of strong carrier localization effects. These experimental results are complemented by tight-binding calculations, accounting for random alloy fluctuations and Coulomb effects. The theoretical data explain the main features of the experimental spectra. Moreover, by comparison with calculations based on a virtual crystal approximation, the importance of carrier localization effects due to random alloy fluctuations is explicitly shown.

Original languageEnglish
Article number223102
JournalApplied Physics Letters
Volume109
Issue number22
DOIs
Publication statusPublished - 28 Nov 2016
MoE publication typeA1 Journal article-refereed

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