Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

S. Schulz; D. S. P. Tanner; E. P. O'Reilly; M. A. Caro; F. Tang; J. T. Griffiths; F. Oehler; M.J. Kappers; R.A. Oliver; C.J. Humphreys; D. Sutherland; M.J. Davies; P. Dawson

doi:10.1063/1.4968591

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

S. Schulz, D. S. P. Tanner, E. P. O'Reilly, M. A. Caro, F. Tang, J. T. Griffiths, F. Oehler, M.J. Kappers, R.A. Oliver, C.J. Humphreys, D. Sutherland, M.J. Davies, P. Dawson

Department of Electrical Engineering and Automation

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Abstract

We present a combined theoretical and experimental analysis of the optical properties of m-plane InGaN/GaN quantum wells. The sample was studied by photoluminescence and photoluminescence excitation spectroscopy at low temperature. The spectra show a large Stokes shift between the lowest exciton peak in the excitation spectra and the peak of the photoluminescence spectrum. This behavior is indicative of strong carrier localization effects. These experimental results are complemented by tight-binding calculations, accounting for random alloy fluctuations and Coulomb effects. The theoretical data explain the main features of the experimental spectra. Moreover, by comparison with calculations based on a virtual crystal approximation, the importance of carrier localization effects due to random alloy fluctuations is explicitly shown.

Original language	English
Article number	223102
Journal	Applied Physics Letters
Volume	109
Issue number	22
DOIs	https://doi.org/10.1063/1.4968591
Publication status	Published - 28 Nov 2016
MoE publication type	A1 Journal article-refereed

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Schulz, S., Tanner, D. S. P., O'Reilly, E. P., Caro, M. A., Tang, F., Griffiths, J. T., Oehler, F., Kappers, M. J., Oliver, R. A., Humphreys, C. J., Sutherland, D., Davies, M. J., & Dawson, P. (2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells. Applied Physics Letters, 109(22), Article 223102. https://doi.org/10.1063/1.4968591

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title = "Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells",

abstract = "We present a combined theoretical and experimental analysis of the optical properties of m-plane InGaN/GaN quantum wells. The sample was studied by photoluminescence and photoluminescence excitation spectroscopy at low temperature. The spectra show a large Stokes shift between the lowest exciton peak in the excitation spectra and the peak of the photoluminescence spectrum. This behavior is indicative of strong carrier localization effects. These experimental results are complemented by tight-binding calculations, accounting for random alloy fluctuations and Coulomb effects. The theoretical data explain the main features of the experimental spectra. Moreover, by comparison with calculations based on a virtual crystal approximation, the importance of carrier localization effects due to random alloy fluctuations is explicitly shown.",

author = "S. Schulz and Tanner, {D. S. P.} and O'Reilly, {E. P.} and Caro, {M. A.} and F. Tang and Griffiths, {J. T.} and F. Oehler and M.J. Kappers and R.A. Oliver and C.J. Humphreys and D. Sutherland and M.J. Davies and P. Dawson",

year = "2016",

month = nov,

day = "28",

doi = "10.1063/1.4968591",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

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Schulz, S, Tanner, DSP, O'Reilly, EP, Caro, MA, Tang, F, Griffiths, JT, Oehler, F, Kappers, MJ, Oliver, RA, Humphreys, CJ, Sutherland, D, Davies, MJ & Dawson, P 2016, 'Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells', Applied Physics Letters, vol. 109, no. 22, 223102. https://doi.org/10.1063/1.4968591

TY - JOUR

T1 - Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

AU - Schulz, S.

AU - Tanner, D. S. P.

AU - O'Reilly, E. P.

AU - Caro, M. A.

AU - Tang, F.

AU - Griffiths, J. T.

AU - Oehler, F.

AU - Kappers, M.J.

AU - Oliver, R.A.

AU - Humphreys, C.J.

AU - Sutherland, D.

AU - Davies, M.J.

AU - Dawson, P.

PY - 2016/11/28

Y1 - 2016/11/28

N2 - We present a combined theoretical and experimental analysis of the optical properties of m-plane InGaN/GaN quantum wells. The sample was studied by photoluminescence and photoluminescence excitation spectroscopy at low temperature. The spectra show a large Stokes shift between the lowest exciton peak in the excitation spectra and the peak of the photoluminescence spectrum. This behavior is indicative of strong carrier localization effects. These experimental results are complemented by tight-binding calculations, accounting for random alloy fluctuations and Coulomb effects. The theoretical data explain the main features of the experimental spectra. Moreover, by comparison with calculations based on a virtual crystal approximation, the importance of carrier localization effects due to random alloy fluctuations is explicitly shown.

AB - We present a combined theoretical and experimental analysis of the optical properties of m-plane InGaN/GaN quantum wells. The sample was studied by photoluminescence and photoluminescence excitation spectroscopy at low temperature. The spectra show a large Stokes shift between the lowest exciton peak in the excitation spectra and the peak of the photoluminescence spectrum. This behavior is indicative of strong carrier localization effects. These experimental results are complemented by tight-binding calculations, accounting for random alloy fluctuations and Coulomb effects. The theoretical data explain the main features of the experimental spectra. Moreover, by comparison with calculations based on a virtual crystal approximation, the importance of carrier localization effects due to random alloy fluctuations is explicitly shown.

UR - http://www.scopus.com/inward/record.url?scp=85000733466&partnerID=8YFLogxK

U2 - 10.1063/1.4968591

DO - 10.1063/1.4968591

M3 - Article

AN - SCOPUS:85000733466

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223102

ER -

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

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