The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography

P.J. McNally; A.N. Danilewsky; J.W. Curley; A. Reader; R. Rantamäki; T. Tuomi; M. Bolt; M. Taskinen

The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography

P.J. McNally, A.N. Danilewsky, J.W. Curley, A. Reader, R. Rantamäki, T. Tuomi, M. Bolt, M. Taskinen

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Original language	English
Pages (from-to)	47-56
Journal	Microelectronic Engineering
Volume	45
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

Keywords

epitaxial
quality
synchrotron silicon
wafer
x-ray topography

Cite this

@article{1fd164a28a9a448a945918c03bad833d,

title = "The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography",

keywords = "epitaxial, quality, synchrotron silicon, wafer, x-ray topography, epitaxial, quality, synchrotron silicon, wafer, x-ray topography, epitaxial, quality, synchrotron silicon, wafer, x-ray topography",

author = "P.J. McNally and A.N. Danilewsky and J.W. Curley and A. Reader and R. Rantam{\"a}ki and T. Tuomi and M. Bolt and M. Taskinen",

year = "1999",

language = "English",

volume = "45",

pages = "47--56",

journal = "Microelectronic Engineering",

issn = "1873-5568",

publisher = "Elsevier",

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TY - JOUR

T1 - The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography

AU - McNally, P.J.

AU - Danilewsky, A.N.

AU - Curley, J.W.

AU - Reader, A.

AU - Rantamäki, R.

AU - Tuomi, T.

AU - Bolt, M.

AU - Taskinen, M.

PY - 1999

Y1 - 1999

KW - epitaxial

KW - quality

KW - synchrotron silicon

KW - wafer

KW - x-ray topography

KW - epitaxial

KW - quality

KW - synchrotron silicon

KW - wafer

KW - x-ray topography

KW - epitaxial

KW - quality

KW - synchrotron silicon

KW - wafer

KW - x-ray topography

UR - https://www.scopus.com/pages/publications/0033075118

M3 - Article

SN - 1873-5568

VL - 45

SP - 47

EP - 56

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography

Keywords

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