The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography

P.J. McNally, A.N. Danilewsky, J.W. Curley, A. Reader, R. Rantamäki, T. Tuomi, M. Bolt, M. Taskinen

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)47-56
    JournalMicroelectronic Engineering
    Volume45
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Keywords

    • epitaxial
    • quality
    • synchrotron silicon
    • wafer
    • x-ray topography

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