The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

K. Saarinen, J. Nissilä, P. Hautojärvi, J. Likonen, T. Suski, I. Grzegory, B. Lucznick, S. Porowski

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Cite this

@article{e15ea4d8bbae4cb7bb9c546b5576b6e9,

title = "The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals",

author = "K. Saarinen and J. Nissil{\"a} and P. Hautoj{\"a}rvi and J. Likonen and T. Suski and I. Grzegory and B. Lucznick and S. Porowski",

year = "1999",

language = "English",

volume = "75",

pages = "2441",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

AU - Saarinen, K.

AU - Nissilä, J.

AU - Hautojärvi, P.

AU - Likonen, J.

AU - Suski, T.

AU - Grzegory, I.

AU - Lucznick, B.

AU - Porowski, S.

PY - 1999

Y1 - 1999

M3 - Article

SN - 1077-3118

VL - 75

SP - 2441

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -