The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations

Jaehyun Lee; Salim Berrada; Jie Liang; Toufik Sadi; Vihar P. Georgiev; Aida Todri-Sanial; Dipankar Kalita; Raphael Ramos; Hanako Okuno; Jean Dijon; Asen Asenov

doi:10.23919/SISPAD.2017.8085288

The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations

Jaehyun Lee, Salim Berrada, Jie Liang, Toufik Sadi, Vihar P. Georgiev, Aida Todri-Sanial, Dipankar Kalita, Raphael Ramos, Hanako Okuno, Jean Dijon, Asen Asenov

Department of Neuroscience and Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

We have performed statistical atomistic simulations with tight-binding approach to investigate the effects of randomly distributed mono-vacancy defects in metallic single-walled carbon nanotube (SWCNT) interconnects. We also extracted defective resistances from the atomistic simulations and performed circuit-level simulations to compare the performance of interconnects with and without defects. We have found that the defects induce significant fluctuations of SWCNT resistance with a median value showing an Ohmic-like behaviour. Fortunately, the resistance depends only on the diameter of SWCNTs and not on their chirality. Moreover, our circuit simulations show that the defective resistance induces important propagation time delay ratio that should be accounted for when designing CNT interconnects.

Original language	English
Title of host publication	2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
Publisher	IEEE
Pages	157-160
Number of pages	4
ISBN (Electronic)	9784863486102
DOIs	https://doi.org/10.23919/SISPAD.2017.8085288
Publication status	Published - 25 Oct 2017
MoE publication type	A4 Conference publication
Event	International Conference on Simulation of Semiconductor Processes and Devices - Kamakura, Japan Duration: 7 Sept 2017 → 9 Sept 2017

Conference

Conference	International Conference on Simulation of Semiconductor Processes and Devices
Abbreviated title	SISPAD
Country/Territory	Japan
City	Kamakura
Period	07/09/2017 → 09/09/2017

Keywords

carbon nanotubes
defective resistance
interconnects
mono-vacancy defects
ststistical simulation
tight-binding

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10.23919/SISPAD.2017.8085288

http://eprints.gla.ac.uk/147284/

Cite this

Lee, J., Berrada, S., Liang, J., Sadi, T., Georgiev, V. P., Todri-Sanial, A., Kalita, D., Ramos, R., Okuno, H., Dijon, J., & Asenov, A. (2017). The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations. In 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 (pp. 157-160). Article 8085288 IEEE. https://doi.org/10.23919/SISPAD.2017.8085288

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title = "The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations",

abstract = "We have performed statistical atomistic simulations with tight-binding approach to investigate the effects of randomly distributed mono-vacancy defects in metallic single-walled carbon nanotube (SWCNT) interconnects. We also extracted defective resistances from the atomistic simulations and performed circuit-level simulations to compare the performance of interconnects with and without defects. We have found that the defects induce significant fluctuations of SWCNT resistance with a median value showing an Ohmic-like behaviour. Fortunately, the resistance depends only on the diameter of SWCNTs and not on their chirality. Moreover, our circuit simulations show that the defective resistance induces important propagation time delay ratio that should be accounted for when designing CNT interconnects.",

keywords = "carbon nanotubes, defective resistance, interconnects, mono-vacancy defects, ststistical simulation, tight-binding",

author = "Jaehyun Lee and Salim Berrada and Jie Liang and Toufik Sadi and Georgiev, {Vihar P.} and Aida Todri-Sanial and Dipankar Kalita and Raphael Ramos and Hanako Okuno and Jean Dijon and Asen Asenov",

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doi = "10.23919/SISPAD.2017.8085288",

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booktitle = "2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017",

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Lee, J, Berrada, S, Liang, J, Sadi, T, Georgiev, VP, Todri-Sanial, A, Kalita, D, Ramos, R, Okuno, H, Dijon, J & Asenov, A 2017, The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations. in 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017., 8085288, IEEE, pp. 157-160, International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 07/09/2017. https://doi.org/10.23919/SISPAD.2017.8085288

The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations. / Lee, Jaehyun; Berrada, Salim; Liang, Jie et al.
2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. IEEE, 2017. p. 157-160 8085288.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Liang, Jie

AU - Sadi, Toufik

AU - Georgiev, Vihar P.

AU - Todri-Sanial, Aida

AU - Kalita, Dipankar

AU - Ramos, Raphael

AU - Okuno, Hanako

AU - Dijon, Jean

AU - Asenov, Asen

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AB - We have performed statistical atomistic simulations with tight-binding approach to investigate the effects of randomly distributed mono-vacancy defects in metallic single-walled carbon nanotube (SWCNT) interconnects. We also extracted defective resistances from the atomistic simulations and performed circuit-level simulations to compare the performance of interconnects with and without defects. We have found that the defects induce significant fluctuations of SWCNT resistance with a median value showing an Ohmic-like behaviour. Fortunately, the resistance depends only on the diameter of SWCNTs and not on their chirality. Moreover, our circuit simulations show that the defective resistance induces important propagation time delay ratio that should be accounted for when designing CNT interconnects.

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The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations

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Keywords

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