The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations

Jaehyun Lee, Salim Berrada, Jie Liang, Toufik Sadi, Vihar P. Georgiev, Aida Todri-Sanial, Dipankar Kalita, Raphael Ramos, Hanako Okuno, Jean Dijon, Asen Asenov

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

We have performed statistical atomistic simulations with tight-binding approach to investigate the effects of randomly distributed mono-vacancy defects in metallic single-walled carbon nanotube (SWCNT) interconnects. We also extracted defective resistances from the atomistic simulations and performed circuit-level simulations to compare the performance of interconnects with and without defects. We have found that the defects induce significant fluctuations of SWCNT resistance with a median value showing an Ohmic-like behaviour. Fortunately, the resistance depends only on the diameter of SWCNTs and not on their chirality. Moreover, our circuit simulations show that the defective resistance induces important propagation time delay ratio that should be accounted for when designing CNT interconnects.

Original languageEnglish
Title of host publication2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
PublisherIEEE
Pages157-160
Number of pages4
ISBN (Electronic)9784863486102
DOIs
Publication statusPublished - 25 Oct 2017
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Simulation of Semiconductor Processes and Devices - Kamakura, Japan
Duration: 7 Sep 20179 Sep 2017

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices
Abbreviated titleSISPAD
CountryJapan
CityKamakura
Period07/09/201709/09/2017

Keywords

  • carbon nanotubes
  • defective resistance
  • interconnects
  • mono-vacancy defects
  • ststistical simulation
  • tight-binding

Fingerprint Dive into the research topics of 'The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations'. Together they form a unique fingerprint.

Cite this