The growth of ErxGa2-xO3 films by atomic layer deposition from two different precursor systems

Charles L. Dezelah; Pia Myllymäki; Jani Päiväsaari; Kai Arstila; Lauri Niinistö; Charles H. Winter

The growth of ErxGa2-xO3 films by atomic layer deposition from two different precursor systems

Charles L. Dezelah
, Pia Myllymäki
, Jani Päiväsaari
, Kai Arstila
, Lauri Niinistö
, Charles H. Winter

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

Original language	English
Pages (from-to)	1308-1315
Journal	Journal of Materials Chemistry
Volume	17
Issue number	13
Publication status	Published - 2007
MoE publication type	A1 Journal article-refereed

Cite this

@article{7848cfd212184df89ce13477f10081a3,

title = "The growth of ErxGa2-xO3 films by atomic layer deposition from two different precursor systems",

author = "Dezelah, \{Charles L.\} and Pia Myllym{\"a}ki and Jani P{\"a}iv{\"a}saari and Kai Arstila and Lauri Niinist{\"o} and Winter, \{Charles H.\}",

year = "2007",

language = "English",

volume = "17",

pages = "1308--1315",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "13",

}

TY - JOUR

T1 - The growth of ErxGa2-xO3 films by atomic layer deposition from two different precursor systems

AU - Dezelah, Charles L.

AU - Myllymäki, Pia

AU - Päiväsaari, Jani

AU - Arstila, Kai

AU - Niinistö, Lauri

AU - Winter, Charles H.

PY - 2007

Y1 - 2007

M3 - Article

SN - 0959-9428

VL - 17

SP - 1308

EP - 1315

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 13

ER -