The future of high-K on pure germanium and its importance for Ge CMOS

M. Meuris*, A. Delabie, S. Van Elshocht, S. Kubicek, P. Verheyen, B. De Jaeger, J. Van Steenbergen, G. Winderickx, E. Van Moorhem, R. L. Puurunen, B. Brijs, M. Caymax, T. Conard, O. Richard, W. Vandervorst, C. Zhao, S. De Gendt, T. Schram, T. Chiarella, B. OnsiaI. Teerlinck, M. Houssa, P. W. Mertens, G. Raskin, P. Mijlemans, S. Biesemans, M. M. Heyns

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

19 Citations (Scopus)


A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO2 layers on Ge indicate that ALCVD layers have some improved capacitor characteristics. An NH3 pre-treatment was essential to obtain MOS C-V characteristics for the deposited HfO2 layer. We also report for the first time, deep sub-micron Ge pFETs made in a silicon-like process flow with a directly etched metal gate stack on a HfO2 dielectric. The results indicate that for improving Ge devices, more understanding on the dopant diffusion control and the reduction of interface state density will be necessary.

Original languageEnglish
Pages (from-to)203-207
Number of pages5
Issue number1-3
Publication statusPublished - Feb 2005
MoE publication typeA1 Journal article-refereed


  • CMOS
  • Germanium
  • HfO2
  • NH3 anneal


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