The future of high-K on pure germanium and its importance for Ge CMOS

M. Meuris; A. Delabie; S. Van Elshocht; S. Kubicek; P. Verheyen; B. De Jaeger; J. Van Steenbergen; G. Winderickx; E. Van Moorhem; R. L. Puurunen; B. Brijs; M. Caymax; T. Conard; O. Richard; W. Vandervorst; C. Zhao; S. De Gendt; T. Schram; T. Chiarella; B. Onsia; I. Teerlinck; M. Houssa; P. W. Mertens; G. Raskin; P. Mijlemans; S. Biesemans; M. M. Heyns

doi:10.1016/j.mssp.2004.09.124

The future of high-K on pure germanium and its importance for Ge CMOS

M. Meuris^*, A. Delabie, S. Van Elshocht, S. Kubicek, P. Verheyen, B. De Jaeger, J. Van Steenbergen, G. Winderickx, E. Van Moorhem, R. L. Puurunen, B. Brijs, M. Caymax, T. Conard, O. Richard, W. Vandervorst, C. Zhao, S. De Gendt, T. Schram, T. Chiarella, B. OnsiaI. Teerlinck, M. Houssa, P. W. Mertens, G. Raskin, P. Mijlemans, S. Biesemans, M. M. Heyns

^*Corresponding author for this work

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

20 Citations (Scopus)

Abstract

A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO₂ layers on Ge indicate that ALCVD layers have some improved capacitor characteristics. An NH₃ pre-treatment was essential to obtain MOS C-V characteristics for the deposited HfO₂ layer. We also report for the first time, deep sub-micron Ge pFETs made in a silicon-like process flow with a directly etched metal gate stack on a HfO₂ dielectric. The results indicate that for improving Ge devices, more understanding on the dopant diffusion control and the reduction of interface state density will be necessary.

Original language	English
Pages (from-to)	203-207
Number of pages	5
Journal	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume	8
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mssp.2004.09.124
Publication status	Published - Feb 2005
MoE publication type	A1 Journal article-refereed

Keywords

ALCVD
CMOS
Germanium
HfO2
MOCVD
NH3 anneal

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10.1016/j.mssp.2004.09.124

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Meuris, M., Delabie, A., Van Elshocht, S., Kubicek, S., Verheyen, P., De Jaeger, B., Van Steenbergen, J., Winderickx, G., Van Moorhem, E., Puurunen, R. L., Brijs, B., Caymax, M., Conard, T., Richard, O., Vandervorst, W., Zhao, C., De Gendt, S., Schram, T., Chiarella, T., ... Heyns, M. M. (2005). The future of high-K on pure germanium and its importance for Ge CMOS. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 8(1-3), 203-207. https://doi.org/10.1016/j.mssp.2004.09.124

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title = "The future of high-K on pure germanium and its importance for Ge CMOS",

abstract = "A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO2 layers on Ge indicate that ALCVD layers have some improved capacitor characteristics. An NH3 pre-treatment was essential to obtain MOS C-V characteristics for the deposited HfO2 layer. We also report for the first time, deep sub-micron Ge pFETs made in a silicon-like process flow with a directly etched metal gate stack on a HfO2 dielectric. The results indicate that for improving Ge devices, more understanding on the dopant diffusion control and the reduction of interface state density will be necessary.",

keywords = "ALCVD, CMOS, Germanium, HfO2, MOCVD, NH3 anneal",

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volume = "8",

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Meuris, M, Delabie, A, Van Elshocht, S, Kubicek, S, Verheyen, P, De Jaeger, B, Van Steenbergen, J, Winderickx, G, Van Moorhem, E, Puurunen, RL, Brijs, B, Caymax, M, Conard, T, Richard, O, Vandervorst, W, Zhao, C, De Gendt, S, Schram, T, Chiarella, T, Onsia, B, Teerlinck, I, Houssa, M, Mertens, PW, Raskin, G, Mijlemans, P, Biesemans, S & Heyns, MM 2005, 'The future of high-K on pure germanium and its importance for Ge CMOS', MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol. 8, no. 1-3, pp. 203-207. https://doi.org/10.1016/j.mssp.2004.09.124

TY - JOUR

T1 - The future of high-K on pure germanium and its importance for Ge CMOS

AU - Meuris, M.

AU - Delabie, A.

AU - Van Elshocht, S.

AU - Kubicek, S.

AU - Verheyen, P.

AU - De Jaeger, B.

AU - Van Steenbergen, J.

AU - Winderickx, G.

AU - Van Moorhem, E.

AU - Puurunen, R. L.

AU - Brijs, B.

AU - Caymax, M.

AU - Conard, T.

AU - Richard, O.

AU - Vandervorst, W.

AU - Zhao, C.

AU - De Gendt, S.

AU - Schram, T.

AU - Chiarella, T.

AU - Onsia, B.

AU - Teerlinck, I.

AU - Houssa, M.

AU - Mertens, P. W.

AU - Raskin, G.

AU - Mijlemans, P.

AU - Biesemans, S.

AU - Heyns, M. M.

PY - 2005/2

Y1 - 2005/2

N2 - A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO2 layers on Ge indicate that ALCVD layers have some improved capacitor characteristics. An NH3 pre-treatment was essential to obtain MOS C-V characteristics for the deposited HfO2 layer. We also report for the first time, deep sub-micron Ge pFETs made in a silicon-like process flow with a directly etched metal gate stack on a HfO2 dielectric. The results indicate that for improving Ge devices, more understanding on the dopant diffusion control and the reduction of interface state density will be necessary.

AB - A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO2 layers on Ge indicate that ALCVD layers have some improved capacitor characteristics. An NH3 pre-treatment was essential to obtain MOS C-V characteristics for the deposited HfO2 layer. We also report for the first time, deep sub-micron Ge pFETs made in a silicon-like process flow with a directly etched metal gate stack on a HfO2 dielectric. The results indicate that for improving Ge devices, more understanding on the dopant diffusion control and the reduction of interface state density will be necessary.

KW - ALCVD

KW - CMOS

KW - Germanium

KW - HfO2

KW - MOCVD

KW - NH3 anneal

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U2 - 10.1016/j.mssp.2004.09.124

DO - 10.1016/j.mssp.2004.09.124

M3 - Article

AN - SCOPUS:19944434234

SN - 1369-8001

VL - 8

SP - 203

EP - 207

JO - MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

JF - MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IS - 1-3

ER -

The future of high-K on pure germanium and its importance for Ge CMOS

Abstract

Keywords

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