The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron x-ray topography

Aapo Lankinen, D. Noonan, P.J. McNally, W-N Chen, Lauri Knuuttila, Turkka Tuomi, A.N. Danilewsky, R. Simon

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1372-1378
    JournalMicroelectronics Journal
    Volume37
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed

    Cite this

    Lankinen, A., Noonan, D., McNally, P. J., Chen, W-N., Knuuttila, L., Tuomi, T., Danilewsky, A. N., & Simon, R. (2006). The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron x-ray topography. Microelectronics Journal, 37, 1372-1378.