Abstract
We have recently developed a self consistent light-emitting diode (LED) model that accounts for the current transport and internal heating in AlGaAs-GaAs LEDs. In this paper we extend the model to describe multi-quantum well (MQW) active regions and III-N materials, within the limits of the currently known values and temperature dependencies of the recombination parameters in these materials. The MQW description accounts for the effect of the reduced wave function overlap to the recombination. We present simulation results obtained for an InGaN MQW LED with 4 wells at selected temperatures and discuss the factors limiting the efficiency and luminescent output of LEDs.
| Original language | English |
|---|---|
| Title of host publication | Multiphysics Modeling in Materials Design |
| Pages | 37-42 |
| Number of pages | 6 |
| Volume | 1229 |
| Publication status | Published - 9 Jul 2010 |
| MoE publication type | A4 Conference publication |
| Event | Materials Research Society Fall Meeting - Boston, United States Duration: 30 Nov 2009 → 4 Dec 2009 |
Conference
| Conference | Materials Research Society Fall Meeting |
|---|---|
| Abbreviated title | MRS |
| Country/Territory | United States |
| City | Boston |
| Period | 30/11/2009 → 04/12/2009 |