The effect of temperature on the efficiency of nitride-based multi-quantum well light-emitting diodes

Oskari Heikkilä*, Jani Oksanen, Jukka Tulkki

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

We have recently developed a self consistent light-emitting diode (LED) model that accounts for the current transport and internal heating in AlGaAs-GaAs LEDs. In this paper we extend the model to describe multi-quantum well (MQW) active regions and III-N materials, within the limits of the currently known values and temperature dependencies of the recombination parameters in these materials. The MQW description accounts for the effect of the reduced wave function overlap to the recombination. We present simulation results obtained for an InGaN MQW LED with 4 wells at selected temperatures and discuss the factors limiting the efficiency and luminescent output of LEDs.

Original languageEnglish
Title of host publicationMultiphysics Modeling in Materials Design
Pages37-42
Number of pages6
Volume1229
Publication statusPublished - 9 Jul 2010
MoE publication typeA4 Article in a conference publication
EventMaterials Research Society Fall Meeting - Boston, United States
Duration: 30 Nov 20094 Dec 2009

Conference

ConferenceMaterials Research Society Fall Meeting
Abbreviated titleMRS
CountryUnited States
CityBoston
Period30/11/200904/12/2009

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