The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer

Research output: Working paperProfessional

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Original languageEnglish
Place of PublicationEspoo
Pages26-29
Publication statusPublished - 1993
MoE publication typeD4 Published development or research report or study

Publication series

NameOptoelectronics Laboratory, Helsinki University of Technology
No.TKK-F-C148

    Research areas

  • compound semiconductors, praseodymium dioxide doping

ID: 5161915