TY - UNPB
T1 - The effect of praseodymium dioxide doping on the electrical properties of LPE-grown InGaAsP layers
AU - Hjelt, K.
AU - Hasenöhrl, S.
AU - Tuomi, T.
PY - 1993
Y1 - 1993
KW - compound semiconductors
KW - liquid phase epitaxy (LPE)
KW - praseodymium dioxide doping
KW - compound semiconductors
KW - liquid phase epitaxy (LPE)
KW - praseodymium dioxide doping
KW - compound semiconductors
KW - liquid phase epitaxy (LPE)
KW - praseodymium dioxide doping
M3 - Working paper
T3 - Optoelectronics Laboratory, Helsinki University of Technology
SP - 30
EP - 33
BT - The effect of praseodymium dioxide doping on the electrical properties of LPE-grown InGaAsP layers
CY - Espoo
ER -