The effect of praseodymium dioxide doping on the electrical properties of LPE-grown InGaAsP layers

K. Hjelt; S. Hasenöhrl; T. Tuomi

The effect of praseodymium dioxide doping on the electrical properties of LPE-grown InGaAsP layers

K. Hjelt, S. Hasenöhrl, T. Tuomi

Research output: Working paper › Professional

Original language	English
Place of Publication	Espoo
Pages	30-33
Publication status	Published - 1993
MoE publication type	D4 Published development or research report or study

Publication series

Name	Optoelectronics Laboratory, Helsinki University of Technology
No.	TKK-F-C148

Keywords

compound semiconductors
liquid phase epitaxy (LPE)
praseodymium dioxide doping

Cite this

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title = "The effect of praseodymium dioxide doping on the electrical properties of LPE-grown InGaAsP layers",

keywords = "compound semiconductors, liquid phase epitaxy (LPE), praseodymium dioxide doping, compound semiconductors, liquid phase epitaxy (LPE), praseodymium dioxide doping, compound semiconductors, liquid phase epitaxy (LPE), praseodymium dioxide doping",

author = "K. Hjelt and S. Hasen{\"o}hrl and T. Tuomi",

year = "1993",

language = "English",

series = "Optoelectronics Laboratory, Helsinki University of Technology",

number = "TKK-F-C148",

pages = "30--33",

type = "WorkingPaper",

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T1 - The effect of praseodymium dioxide doping on the electrical properties of LPE-grown InGaAsP layers

AU - Hjelt, K.

AU - Hasenöhrl, S.

AU - Tuomi, T.

PY - 1993

Y1 - 1993

KW - compound semiconductors

KW - liquid phase epitaxy (LPE)

KW - praseodymium dioxide doping

KW - compound semiconductors

KW - liquid phase epitaxy (LPE)

KW - praseodymium dioxide doping

KW - compound semiconductors

KW - liquid phase epitaxy (LPE)

KW - praseodymium dioxide doping

M3 - Working paper

T3 - Optoelectronics Laboratory, Helsinki University of Technology

SP - 30

EP - 33

BT - The effect of praseodymium dioxide doping on the electrical properties of LPE-grown InGaAsP layers

CY - Espoo

ER -