The effect of praseodymium dioxide doping on the electrical properties of LPE-grown InGaAsP layers

K. Hjelt, S. Hasenöhrl, T. Tuomi

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationEspoo
    Pages30-33
    Publication statusPublished - 1993
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameOptoelectronics Laboratory, Helsinki University of Technology
    No.TKK-F-C148

    Keywords

    • compound semiconductors
    • liquid phase epitaxy (LPE)
    • praseodymium dioxide doping

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