The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method

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The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method. / Yli-Koski, Marko; Härkönen, Jaakko; Tuominen, Eija; Lassila-Perini, L.; Mehtälä, P.; Nummela, S.; Nysten, J.; Heikkilä, Paula; Ovchinnikov, Victor; Palokangas, Martti; Palmu, L.; Kallijärvi, S.; Alanko, T.; Laitinen, P; Pirojenko, A; Riihimäki, I.; Tiourine, G.; Virtanen, A.

In: IEEE Transactions on Nuclear Science, Vol. 49, No. 6, 2002, p. 2910-2913.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Yli-Koski, M, Härkönen, J, Tuominen, E, Lassila-Perini, L, Mehtälä, P, Nummela, S, Nysten, J, Heikkilä, P, Ovchinnikov, V, Palokangas, M, Palmu, L, Kallijärvi, S, Alanko, T, Laitinen, P, Pirojenko, A, Riihimäki, I, Tiourine, G & Virtanen, A 2002, 'The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method' IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 2910-2913.

APA

Yli-Koski, M., Härkönen, J., Tuominen, E., Lassila-Perini, L., Mehtälä, P., Nummela, S., ... Virtanen, A. (2002). The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method. IEEE Transactions on Nuclear Science, 49(6), 2910-2913.

Vancouver

Yli-Koski M, Härkönen J, Tuominen E, Lassila-Perini L, Mehtälä P, Nummela S et al. The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method. IEEE Transactions on Nuclear Science. 2002;49(6):2910-2913.

Author

Yli-Koski, Marko ; Härkönen, Jaakko ; Tuominen, Eija ; Lassila-Perini, L. ; Mehtälä, P. ; Nummela, S. ; Nysten, J. ; Heikkilä, Paula ; Ovchinnikov, Victor ; Palokangas, Martti ; Palmu, L. ; Kallijärvi, S. ; Alanko, T. ; Laitinen, P ; Pirojenko, A ; Riihimäki, I. ; Tiourine, G. ; Virtanen, A. / The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method. In: IEEE Transactions on Nuclear Science. 2002 ; Vol. 49, No. 6. pp. 2910-2913.

Bibtex - Download

@article{0b653f5ca2af44a4881809ec0bf3d2a8,
title = "The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method",
keywords = "radiation hardness, silicon detectors, SPV, surface photovoltage, radiation hardness, silicon detectors, SPV, surface photovoltage, radiation hardness, silicon detectors, SPV, surface photovoltage",
author = "Marko Yli-Koski and Jaakko H{\"a}rk{\"o}nen and Eija Tuominen and L. Lassila-Perini and P. Meht{\"a}l{\"a} and S. Nummela and J. Nysten and Paula Heikkil{\"a} and Victor Ovchinnikov and Martti Palokangas and L. Palmu and S. Kallij{\"a}rvi and T. Alanko and P Laitinen and A Pirojenko and I. Riihim{\"a}ki and G. Tiourine and A. Virtanen",
year = "2002",
language = "English",
volume = "49",
pages = "2910--2913",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers",
number = "6",

}

RIS - Download

TY - JOUR

T1 - The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method

AU - Yli-Koski, Marko

AU - Härkönen, Jaakko

AU - Tuominen, Eija

AU - Lassila-Perini, L.

AU - Mehtälä, P.

AU - Nummela, S.

AU - Nysten, J.

AU - Heikkilä, Paula

AU - Ovchinnikov, Victor

AU - Palokangas, Martti

AU - Palmu, L.

AU - Kallijärvi, S.

AU - Alanko, T.

AU - Laitinen, P

AU - Pirojenko, A

AU - Riihimäki, I.

AU - Tiourine, G.

AU - Virtanen, A.

PY - 2002

Y1 - 2002

KW - radiation hardness

KW - silicon detectors

KW - SPV

KW - surface photovoltage

KW - radiation hardness

KW - silicon detectors

KW - SPV

KW - surface photovoltage

KW - radiation hardness

KW - silicon detectors

KW - SPV

KW - surface photovoltage

M3 - Article

VL - 49

SP - 2910

EP - 2913

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

ER -

ID: 4148026