The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • Marko Yli-Koski

  • Jaakko Härkönen
  • Eija Tuominen
  • L. Lassila-Perini
  • P. Mehtälä
  • S. Nummela
  • J. Nysten
  • Paula Heikkilä
  • Victor Ovchinnikov

  • Martti Palokangas
  • L. Palmu
  • S. Kallijärvi
  • T. Alanko
  • P Laitinen
  • A Pirojenko
  • I. Riihimäki
  • G. Tiourine
  • A. Virtanen

Research units

Details

Original languageEnglish
Pages (from-to)2910-2913
JournalIEEE Transactions on Nuclear Science
Volume49
Issue number6
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

    Research areas

  • radiation hardness, silicon detectors, SPV, surface photovoltage

ID: 4148026