The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method

Marko Yli-Koski, Jaakko Härkönen, Eija Tuominen, Kati Lassila-Perini, P. Mehtälä, S. Nummela, J. Nysten, Paula Heikkilä, Victor Ovchinnikov, Martti Palokangas, Leena Palmu, S. Kallijärvi, T. Alanko, P Laitinen, A Pirojenko, I. Riihimäki, G. Tiourine, Ari Virtanen

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)2910-2913
JournalIEEE Transactions on Nuclear Science
Volume49
Issue number6
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Keywords

  • radiation hardness
  • silicon detectors
  • SPV
  • surface photovoltage

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