The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization of GaN LED efficiency

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Original languageEnglish
Pages (from-to)740-743
JournalJournal of Crystal Growth
Volume298
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

    Research areas

  • InGaN, light emitting diodes, MOCVK, quantum wells

ID: 3619159